Luminescence blue-shift of CdSe nanowires beyond the quantum confinement regime

Yuan Yan; Zhi Min Liao; Ya Qing Bie; Han Chun Wu; Yang Bo Zhou; Xue Wen Fu; Da Peng Yu

doi:10.1063/1.3634047

Luminescence blue-shift of CdSe nanowires beyond the quantum confinement regime

Yuan Yan, Zhi Min Liao^*, Ya Qing Bie, Han Chun Wu, Yang Bo Zhou, Xue Wen Fu, Da Peng Yu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Photoluminescence (PL) properties of individual CdSe nanowires with diameters beyond the quantum confinement regime have been studied. A blue-shift in the PL spectra was observed with decreasing nanowire diameter. We attribute the blue-shift to band-filling effect. Carrier density induced by surface vacancy doping and laser excitation is found to be high enough to meet the criterion of the band-filling effect and increases with decreasing nanowire diameter. Temperature dependent PL analysis and characterizations of a single CdSe nanowire based field-effect transistor were also performed.

Original language	English
Article number	103103
Journal	Applied Physics Letters
Volume	99
Issue number	10
DOIs	https://doi.org/10.1063/1.3634047
Publication status	Published - 5 Sept 2011
Externally published	Yes

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title = "Luminescence blue-shift of CdSe nanowires beyond the quantum confinement regime",

abstract = "Photoluminescence (PL) properties of individual CdSe nanowires with diameters beyond the quantum confinement regime have been studied. A blue-shift in the PL spectra was observed with decreasing nanowire diameter. We attribute the blue-shift to band-filling effect. Carrier density induced by surface vacancy doping and laser excitation is found to be high enough to meet the criterion of the band-filling effect and increases with decreasing nanowire diameter. Temperature dependent PL analysis and characterizations of a single CdSe nanowire based field-effect transistor were also performed.",

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T1 - Luminescence blue-shift of CdSe nanowires beyond the quantum confinement regime

AU - Yan, Yuan

AU - Liao, Zhi Min

AU - Bie, Ya Qing

AU - Wu, Han Chun

AU - Zhou, Yang Bo

AU - Fu, Xue Wen

AU - Yu, Da Peng

PY - 2011/9/5

Y1 - 2011/9/5

N2 - Photoluminescence (PL) properties of individual CdSe nanowires with diameters beyond the quantum confinement regime have been studied. A blue-shift in the PL spectra was observed with decreasing nanowire diameter. We attribute the blue-shift to band-filling effect. Carrier density induced by surface vacancy doping and laser excitation is found to be high enough to meet the criterion of the band-filling effect and increases with decreasing nanowire diameter. Temperature dependent PL analysis and characterizations of a single CdSe nanowire based field-effect transistor were also performed.

AB - Photoluminescence (PL) properties of individual CdSe nanowires with diameters beyond the quantum confinement regime have been studied. A blue-shift in the PL spectra was observed with decreasing nanowire diameter. We attribute the blue-shift to band-filling effect. Carrier density induced by surface vacancy doping and laser excitation is found to be high enough to meet the criterion of the band-filling effect and increases with decreasing nanowire diameter. Temperature dependent PL analysis and characterizations of a single CdSe nanowire based field-effect transistor were also performed.

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U2 - 10.1063/1.3634047

DO - 10.1063/1.3634047

M3 - Article

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SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103103

ER -

Luminescence blue-shift of CdSe nanowires beyond the quantum confinement regime

Abstract

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