Low-temperature bonding of Cu on Si3N4 substrate by using Ti/Cu thin films

Yanyu Song; Ling Liu; Duo Liu; Xiaoguo Song; Jian Cao

doi:10.1016/j.matlet.2022.132330

Low-temperature bonding of Cu on Si₃N₄ substrate by using Ti/Cu thin films

Yanyu Song, Ling Liu, Duo Liu^*, Xiaoguo Song, Jian Cao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A low-temperature bonding method of Si₃N₄/Si₃N₄ homostructure and Si₃N₄/Cu heterostructure was developed in this work. The flawless interfaces were obtained by sputtered Ti/Cu thin films after bonding at 250 °C for 30 min under a uniaxial pressure of 20 MPa. The Ti film is able to improve the adhesion of the Cu film to Si₃N₄ substrate, and the low-temperature bonding was achieved in view of high diffusion rates of Cu nanocrystalline film with (1 1 1) crystal plane. This proof-of-concept study on the low-temperature bonding of Si₃N₄ ceramic to Cu is expected to address residual stress caused by ordinary active metal brazing (AMB) method, which provides insights for the further heterogeneous integrations of ceramics to metals.

Original language	English
Article number	132330
Journal	Materials Letters
Volume	320
DOIs	https://doi.org/10.1016/j.matlet.2022.132330
Publication status	Published - 1 Aug 2022
Externally published	Yes

Keywords

Cu-on-SiN
Diffusion bonding
Microstructure
Sputtering
Ti/Cu thin films

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10.1016/j.matlet.2022.132330

Cite this

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title = "Low-temperature bonding of Cu on Si3N4 substrate by using Ti/Cu thin films",

abstract = "A low-temperature bonding method of Si3N4/Si3N4 homostructure and Si3N4/Cu heterostructure was developed in this work. The flawless interfaces were obtained by sputtered Ti/Cu thin films after bonding at 250 °C for 30 min under a uniaxial pressure of 20 MPa. The Ti film is able to improve the adhesion of the Cu film to Si3N4 substrate, and the low-temperature bonding was achieved in view of high diffusion rates of Cu nanocrystalline film with (1 1 1) crystal plane. This proof-of-concept study on the low-temperature bonding of Si3N4 ceramic to Cu is expected to address residual stress caused by ordinary active metal brazing (AMB) method, which provides insights for the further heterogeneous integrations of ceramics to metals.",

keywords = "Cu-on-SiN, Diffusion bonding, Microstructure, Sputtering, Ti/Cu thin films",

author = "Yanyu Song and Ling Liu and Duo Liu and Xiaoguo Song and Jian Cao",

note = "Publisher Copyright: {\textcopyright} 2022",

year = "2022",

month = aug,

day = "1",

doi = "10.1016/j.matlet.2022.132330",

language = "English",

volume = "320",

journal = "Materials Letters",

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TY - JOUR

T1 - Low-temperature bonding of Cu on Si3N4 substrate by using Ti/Cu thin films

AU - Song, Yanyu

AU - Liu, Ling

AU - Liu, Duo

AU - Song, Xiaoguo

AU - Cao, Jian

PY - 2022/8/1

Y1 - 2022/8/1

N2 - A low-temperature bonding method of Si3N4/Si3N4 homostructure and Si3N4/Cu heterostructure was developed in this work. The flawless interfaces were obtained by sputtered Ti/Cu thin films after bonding at 250 °C for 30 min under a uniaxial pressure of 20 MPa. The Ti film is able to improve the adhesion of the Cu film to Si3N4 substrate, and the low-temperature bonding was achieved in view of high diffusion rates of Cu nanocrystalline film with (1 1 1) crystal plane. This proof-of-concept study on the low-temperature bonding of Si3N4 ceramic to Cu is expected to address residual stress caused by ordinary active metal brazing (AMB) method, which provides insights for the further heterogeneous integrations of ceramics to metals.

AB - A low-temperature bonding method of Si3N4/Si3N4 homostructure and Si3N4/Cu heterostructure was developed in this work. The flawless interfaces were obtained by sputtered Ti/Cu thin films after bonding at 250 °C for 30 min under a uniaxial pressure of 20 MPa. The Ti film is able to improve the adhesion of the Cu film to Si3N4 substrate, and the low-temperature bonding was achieved in view of high diffusion rates of Cu nanocrystalline film with (1 1 1) crystal plane. This proof-of-concept study on the low-temperature bonding of Si3N4 ceramic to Cu is expected to address residual stress caused by ordinary active metal brazing (AMB) method, which provides insights for the further heterogeneous integrations of ceramics to metals.

KW - Cu-on-SiN

KW - Diffusion bonding

KW - Microstructure

KW - Sputtering

KW - Ti/Cu thin films

UR - http://www.scopus.com/inward/record.url?scp=85129091489&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2022.132330

DO - 10.1016/j.matlet.2022.132330

M3 - Article

AN - SCOPUS:85129091489

SN - 0167-577X

VL - 320

JO - Materials Letters

JF - Materials Letters

M1 - 132330

ER -

Low-temperature bonding of Cu on Si₃N₄ substrate by using Ti/Cu thin films

Abstract

Keywords

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