Lead-free tin-based perovskites nanocrystals for high-performance self-driven bulk-heterojunction photodetectors

M. Sulaman, S. Y. Yang*, Z. H. Zhang, A. Imran, A. Bukhtiar, Z. H. Ge, Y. Tang, Y. R. Jiang, L. B. Tang, B. S. Zou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)

Abstract

Currently, photodetectors based on metal-halide perovskites are the fastest-emergent photovoltaics technology in terms of research and development. Lead-based perovskite semiconductors exhibit unusual structural and electrical properties due to the chemical instability of Pb+2 content. All-inorganic lead-free perovskites have become an alternative perovskite material for optoelectronic devices. However, high trap state density and the surface non-uniformity of the active layer make them inappropriate for high-performance photodetectors. Therefore, in this work, a feasible method for surface-passivation of all-inorganic lead-free perovskites with poly (3-hexylthiophene) (P3HT) as the photoactive layer for high-performance photodetectors is presented, and the underlain mechanisms to enhance device performance are investigated by experiments and simulation. As the result, the photoresponsivity of 1.56 A/W with a specific detectivity of 1.40 × 1014 Jones was obtained from photodetectors ITO/ZnO/CsSnBr3:P3HT/CuSCN/Au under 0.1 mW/cm2 532 nm illumination in self-driven mode. Our experiments and simulation show that the enhanced-performance origins from both the enhanced transportation of the photogenerated charge carriers and the suppressed dark current through the device.

Original languageEnglish
Article number100829
JournalMaterials Today Physics
Volume27
DOIs
Publication statusPublished - Oct 2022

Keywords

  • CsSnBr:P3HT nanocomposites
  • Lead-free perovskites
  • Photodetectors
  • Solution-processed
  • Surface passivation

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