Interfacial Chemical Bond Engineering in a Direct Z-Scheme g-C3N4/MoS2 Heterojunction

Fangyuan Xing, Chengzhi Wang, Shiqiao Liu, Shaohua Jin, Haibo Jin, Jingbo Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)

Abstract

The Z-scheme heterojunction shows great potential in photocatalysis due to its superior carrier separation efficiency and strong photoredox properties. However, how to regulate the charge separation at the nanometric interface of heterostructures still remains a challenge. Here, we take g-C3N4 and MoS2 as models and design the Mo-N chemical bond, which connects exactly the CB of MoS2 and VB of g-C3N4. Thus, the Mo-N bond could act as an atomic-level interfacial “bridge” that provides a direct migration path of charge carriers between g-C3N4 and MoS2. Experiments confirmed that the Mo-N bond and the internal electric field promote greatly the photogenerated carrier separation. The optimized photocatalyst exhibits a high hydrogen evolution rate that is about 19.6 times that of the pristine bulk C3N4. This study demonstrates the key role of an atomic-level interfacial chemical bond design in heterojunctions and provides a new idea for the design of efficient catalytic heterojunctions.

Original languageEnglish
Pages (from-to)11731-11740
Number of pages10
JournalACS applied materials & interfaces
Volume15
Issue number9
DOIs
Publication statusPublished - 8 Mar 2023

Keywords

  • Z-scheme heterojunction
  • charge transfer
  • g-CN/MoS
  • interfacial chemical bond
  • internal electric field
  • photocatalyst

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