Li, H., Wang, T., Li, K., & Lu, X. (2016). In-situ Cu layer thickness measurement during chemical mechanical planarization. In H. Wu, H.-L. Lung, Y. Shi, D. Chen, D. Huang, Q. Wang, K. Wu, Y. Zhang, C. Claeys, S. Liang, R. Huang, B. Zhang, P. Song, J. Yan, Q. Lin, & K. Lai (Eds.), China Semiconductor Technology International Conference 2016, CSTIC 2016 Article 7464033 (China Semiconductor Technology International Conference 2016, CSTIC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSTIC.2016.7464033
Li, Hongkai ; Wang, Tongqing ; Li, Kun et al. / In-situ Cu layer thickness measurement during chemical mechanical planarization. China Semiconductor Technology International Conference 2016, CSTIC 2016. editor / Hanming Wu ; Hsiang-Lan Lung ; Ying Shi ; Dong Chen ; David Huang ; Qi Wang ; Kuochun Wu ; Ying Zhang ; Cor Claeys ; Steve Liang ; Ru Huang ; Beichao Zhang ; Peilin Song ; Jiang Yan ; Qinghuang Lin ; Kafai Lai. Institute of Electrical and Electronics Engineers Inc., 2016. (China Semiconductor Technology International Conference 2016, CSTIC 2016).
@inproceedings{463bf746272f4f70a2b03be73ba64f90,
title = "In-situ Cu layer thickness measurement during chemical mechanical planarization",
abstract = "In this paper, the eddy current method is used for measuring the thickness variation of Cu layer during chemical mechanical planarization (CMP) process. And an in-situ measurement system has been developed. A series of experiments have been done on the Universal-300 CMP system for evaluating the feasibility and reliability of the in-situ measurement system, and the accuracy of the system is presented. According to the experiment results, this technique can reach to nano-scale measurement and satisfies the in-situ measurement requirements. All the efforts are expected to further improve the in situ measurement technique, and ensure that the CMP system works efficiently.",
author = "Hongkai Li and Tongqing Wang and Kun Li and Xinchun Lu",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; China Semiconductor Technology International Conference, CSTIC 2016 ; Conference date: 13-03-2016 Through 14-03-2016",
year = "2016",
month = may,
day = "2",
doi = "10.1109/CSTIC.2016.7464033",
language = "English",
series = "China Semiconductor Technology International Conference 2016, CSTIC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Hanming Wu and Hsiang-Lan Lung and Ying Shi and Dong Chen and David Huang and Qi Wang and Kuochun Wu and Ying Zhang and Cor Claeys and Steve Liang and Ru Huang and Beichao Zhang and Peilin Song and Jiang Yan and Qinghuang Lin and Kafai Lai",
booktitle = "China Semiconductor Technology International Conference 2016, CSTIC 2016",
address = "United States",
}
Li, H, Wang, T, Li, K & Lu, X 2016, In-situ Cu layer thickness measurement during chemical mechanical planarization. in H Wu, H-L Lung, Y Shi, D Chen, D Huang, Q Wang, K Wu, Y Zhang, C Claeys, S Liang, R Huang, B Zhang, P Song, J Yan, Q Lin & K Lai (eds), China Semiconductor Technology International Conference 2016, CSTIC 2016., 7464033, China Semiconductor Technology International Conference 2016, CSTIC 2016, Institute of Electrical and Electronics Engineers Inc., China Semiconductor Technology International Conference, CSTIC 2016, Shanghai, China, 13/03/16. https://doi.org/10.1109/CSTIC.2016.7464033
In-situ Cu layer thickness measurement during chemical mechanical planarization. /
Li, Hongkai; Wang, Tongqing; Li, Kun et al.
China Semiconductor Technology International Conference 2016, CSTIC 2016. ed. / Hanming Wu; Hsiang-Lan Lung; Ying Shi; Dong Chen; David Huang; Qi Wang; Kuochun Wu; Ying Zhang; Cor Claeys; Steve Liang; Ru Huang; Beichao Zhang; Peilin Song; Jiang Yan; Qinghuang Lin; Kafai Lai. Institute of Electrical and Electronics Engineers Inc., 2016. 7464033 (China Semiconductor Technology International Conference 2016, CSTIC 2016).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
TY - GEN
T1 - In-situ Cu layer thickness measurement during chemical mechanical planarization
AU - Li, Hongkai
AU - Wang, Tongqing
AU - Li, Kun
AU - Lu, Xinchun
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/5/2
Y1 - 2016/5/2
N2 - In this paper, the eddy current method is used for measuring the thickness variation of Cu layer during chemical mechanical planarization (CMP) process. And an in-situ measurement system has been developed. A series of experiments have been done on the Universal-300 CMP system for evaluating the feasibility and reliability of the in-situ measurement system, and the accuracy of the system is presented. According to the experiment results, this technique can reach to nano-scale measurement and satisfies the in-situ measurement requirements. All the efforts are expected to further improve the in situ measurement technique, and ensure that the CMP system works efficiently.
AB - In this paper, the eddy current method is used for measuring the thickness variation of Cu layer during chemical mechanical planarization (CMP) process. And an in-situ measurement system has been developed. A series of experiments have been done on the Universal-300 CMP system for evaluating the feasibility and reliability of the in-situ measurement system, and the accuracy of the system is presented. According to the experiment results, this technique can reach to nano-scale measurement and satisfies the in-situ measurement requirements. All the efforts are expected to further improve the in situ measurement technique, and ensure that the CMP system works efficiently.
UR - http://www.scopus.com/inward/record.url?scp=84974604994&partnerID=8YFLogxK
U2 - 10.1109/CSTIC.2016.7464033
DO - 10.1109/CSTIC.2016.7464033
M3 - Conference contribution
AN - SCOPUS:84974604994
T3 - China Semiconductor Technology International Conference 2016, CSTIC 2016
BT - China Semiconductor Technology International Conference 2016, CSTIC 2016
A2 - Wu, Hanming
A2 - Lung, Hsiang-Lan
A2 - Shi, Ying
A2 - Chen, Dong
A2 - Huang, David
A2 - Wang, Qi
A2 - Wu, Kuochun
A2 - Zhang, Ying
A2 - Claeys, Cor
A2 - Liang, Steve
A2 - Huang, Ru
A2 - Zhang, Beichao
A2 - Song, Peilin
A2 - Yan, Jiang
A2 - Lin, Qinghuang
A2 - Lai, Kafai
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - China Semiconductor Technology International Conference, CSTIC 2016
Y2 - 13 March 2016 through 14 March 2016
ER -
Li H, Wang T, Li K, Lu X. In-situ Cu layer thickness measurement during chemical mechanical planarization. In Wu H, Lung HL, Shi Y, Chen D, Huang D, Wang Q, Wu K, Zhang Y, Claeys C, Liang S, Huang R, Zhang B, Song P, Yan J, Lin Q, Lai K, editors, China Semiconductor Technology International Conference 2016, CSTIC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7464033. (China Semiconductor Technology International Conference 2016, CSTIC 2016). doi: 10.1109/CSTIC.2016.7464033
