In-situ Cu layer thickness measurement during chemical mechanical planarization

Hongkai Li, Tongqing Wang*, Kun Li, Xinchun Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, the eddy current method is used for measuring the thickness variation of Cu layer during chemical mechanical planarization (CMP) process. And an in-situ measurement system has been developed. A series of experiments have been done on the Universal-300 CMP system for evaluating the feasibility and reliability of the in-situ measurement system, and the accuracy of the system is presented. According to the experiment results, this technique can reach to nano-scale measurement and satisfies the in-situ measurement requirements. All the efforts are expected to further improve the in situ measurement technique, and ensure that the CMP system works efficiently.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2016, CSTIC 2016
EditorsHanming Wu, Hsiang-Lan Lung, Ying Shi, Dong Chen, David Huang, Qi Wang, Kuochun Wu, Ying Zhang, Cor Claeys, Steve Liang, Ru Huang, Beichao Zhang, Peilin Song, Jiang Yan, Qinghuang Lin, Kafai Lai
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467388047
DOIs
Publication statusPublished - 2 May 2016
Externally publishedYes
EventChina Semiconductor Technology International Conference, CSTIC 2016 - Shanghai, China
Duration: 13 Mar 201614 Mar 2016

Publication series

NameChina Semiconductor Technology International Conference 2016, CSTIC 2016

Conference

ConferenceChina Semiconductor Technology International Conference, CSTIC 2016
Country/TerritoryChina
CityShanghai
Period13/03/1614/03/16

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