In situ conductivity study of the phase transition in Sb-doped C60

Xiang Li*, Y. J. Tang, H. W. Zhao, W. S. Zhan, Haiqian Wang, J. G. Hou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

C60/Sb bilayers were prepared on the substrate of mica, and their electrical properties were investigated by in situ dc conductivity measurements. The results indicate that the Sb doping in C60 significantly affects the critical temperature (Tc) for the orientational order-disorder transition of C60. The Tc of Sb-doped C60 increases to about 278 K, ∼18 K higher than that of the pristine C60. This transition is sensitive to Sb content and disappears upon annealing. A possible mechanism of such a phase transition is discussed.

Original languageEnglish
Pages (from-to)6931-6933
Number of pages3
JournalJournal of Applied Physics
Volume88
Issue number11
DOIs
Publication statusPublished - Dec 2000
Externally publishedYes

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