Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

Dalin Zhang; Gong Cheng; Jianquan Wang; Chunqian Zhang; Zhi Liu; Yuhua Zuo; Jun Zheng; Chunlai Xue; Chuanbo Li; Buwen Cheng; Qiming Wang

doi:10.1186/1556-276X-9-661

Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

Dalin Zhang, Gong Cheng, Jianquan Wang, Chunqian Zhang, Zhi Liu, Yuhua Zuo, Jun Zheng, Chunlai Xue, Chuanbo Li^*, Buwen Cheng, Qiming Wang

^*Corresponding author for this work

School of Material Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an I_ON/I_OFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.

Original language	English
Article number	661
Journal	Nanoscale Research Letters
Volume	9
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-9-661
Publication status	Published - 2014

Keywords

Horizontal transfer
Photoconductive performance
Si nanowires

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10.1186/1556-276X-9-661

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abstract = "An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an ION/IOFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.",

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T1 - Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

AU - Zhang, Dalin

AU - Cheng, Gong

AU - Wang, Jianquan

AU - Zhang, Chunqian

AU - Liu, Zhi

AU - Zuo, Yuhua

AU - Zheng, Jun

AU - Xue, Chunlai

AU - Li, Chuanbo

AU - Cheng, Buwen

AU - Wang, Qiming

PY - 2014

Y1 - 2014

N2 - An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an ION/IOFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.

AB - An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an ION/IOFF ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.

KW - Horizontal transfer

KW - Photoconductive performance

KW - Si nanowires

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DO - 10.1186/1556-276X-9-661

M3 - Article

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VL - 9

JO - Nanoscale Research Letters

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ER -

Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

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Keywords

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