High Entropy Enabling the Reversible Redox Reaction of V4+/V5+ Couple in NASICON-Type Sodium Ion Cathode

Meng Li, Chen Sun, Qing Ni, Zheng Sun, Yang Liu, Yang Li, Lei Li, Haibo Jin*, Yongjie Zhao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

71 Citations (Scopus)

Abstract

NASICON-type Na3VM(PO4)3 (M: transition metals) cathodes usually suffer from poor cycling stability in the voltage region of above 4 V versus Na+/Na owing to irreversible phase transition and severe structural distortion. Herein, the high entropy concept is extended to NASICONs and Na3VAl0.2Cr0.2Fe0.2In0.2Ga0.2(PO4)3 (NVMP) with high purity is obtained. The NVMP achieves a highly reversible specific capacity of 102 mAh g−1 (2.5–4.4 V vs Na+/Na) via the successive redox reaction of V3+/V4+/V5+ together with a long-term lifespan of 5000 cycles at 20 C (a capacity retention of 86.8%). Even at an extreme temperature of −20 °C, the NVMP cathode can still provide excellent cycling performance (a capacity retention of 94.2% at 5 C after 1000 cycles). Moreover, the increased configurational entropy in the electrode renders a quite small cell volume change of 1.1%. The sodium ion storage mechanism containing solid solution-type in the voltage range of 2.5–3.8 V and bi-phasic in 3.8–4.4 V is revealed by ex situ XRD analysis. Pairing with a hard carbon anode, NVMP//HC cell offers a specific capacity of 81 mAh g−1 at 0.2 C based on the cathode mass. This high-entropy engineering is expected to be widely applicable for the development of polyanionic electrode materials.

Original languageEnglish
Article number2203971
JournalAdvanced Energy Materials
Volume13
Issue number12
DOIs
Publication statusPublished - 24 Mar 2023

Keywords

  • NASICON
  • cycling stability
  • high-entropy cathodes
  • sodium-ion batteries

Fingerprint

Dive into the research topics of 'High Entropy Enabling the Reversible Redox Reaction of V4+/V5+ Couple in NASICON-Type Sodium Ion Cathode'. Together they form a unique fingerprint.

Cite this