Growth direction dependence of the electron spin dynamics in {111} GaAs quantum wells

H. Q. Ye; G. Wang; B. L. Liu; Z. W. Shi; W. X. Wang; C. Fontaine; A. Balocchi; T. Amand; D. Lagarde; P. Renucci; X. Marie

doi:10.1063/1.4737007

Growth direction dependence of the electron spin dynamics in {111} GaAs quantum wells

H. Q. Ye, G. Wang, B. L. Liu^*, Z. W. Shi, W. X. Wang, C. Fontaine, A. Balocchi, T. Amand, D. Lagarde, P. Renucci, X. Marie

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in NIP structures grown on (111)A or (111)B-oriented substrates. In both cases the spin lifetimes are significantly increased by applying an external electric field, but this field has to point along the growth direction for structures grown on (111)A and opposite to it for the ones grown on (111)B. This extended electron spin lifetime is the result of the suppression of the D'yakonov-Perel spin relaxation mechanism [Sov. Phys. Solid State 13, 3023 (1972)] due to the cancellation effect of the internal Dresselhaus term [Phys. Rev. 100, 580 (1955)] with the external electric field induced Rashba one [J. Phys. C 17, 6039 (1984)], both governing the conduction band spin-orbit splitting. These results demonstrate the key role played by the growth direction in the design of spintronic devices.

Original language	English
Article number	032104
Journal	Applied Physics Letters
Volume	101
Issue number	3
DOIs	https://doi.org/10.1063/1.4737007
Publication status	Published - 16 Jul 2012
Externally published	Yes

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@article{eaa02fc79ff74764912f4c54a077048f,

title = "Growth direction dependence of the electron spin dynamics in {111} GaAs quantum wells",

abstract = "The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in NIP structures grown on (111)A or (111)B-oriented substrates. In both cases the spin lifetimes are significantly increased by applying an external electric field, but this field has to point along the growth direction for structures grown on (111)A and opposite to it for the ones grown on (111)B. This extended electron spin lifetime is the result of the suppression of the D'yakonov-Perel spin relaxation mechanism [Sov. Phys. Solid State 13, 3023 (1972)] due to the cancellation effect of the internal Dresselhaus term [Phys. Rev. 100, 580 (1955)] with the external electric field induced Rashba one [J. Phys. C 17, 6039 (1984)], both governing the conduction band spin-orbit splitting. These results demonstrate the key role played by the growth direction in the design of spintronic devices.",

author = "Ye, {H. Q.} and G. Wang and Liu, {B. L.} and Shi, {Z. W.} and Wang, {W. X.} and C. Fontaine and A. Balocchi and T. Amand and D. Lagarde and P. Renucci and X. Marie",

year = "2012",

month = jul,

day = "16",

doi = "10.1063/1.4737007",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Growth direction dependence of the electron spin dynamics in {111} GaAs quantum wells

AU - Ye, H. Q.

AU - Wang, G.

AU - Liu, B. L.

AU - Shi, Z. W.

AU - Wang, W. X.

AU - Fontaine, C.

AU - Balocchi, A.

AU - Amand, T.

AU - Lagarde, D.

AU - Renucci, P.

AU - Marie, X.

PY - 2012/7/16

Y1 - 2012/7/16

N2 - The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in NIP structures grown on (111)A or (111)B-oriented substrates. In both cases the spin lifetimes are significantly increased by applying an external electric field, but this field has to point along the growth direction for structures grown on (111)A and opposite to it for the ones grown on (111)B. This extended electron spin lifetime is the result of the suppression of the D'yakonov-Perel spin relaxation mechanism [Sov. Phys. Solid State 13, 3023 (1972)] due to the cancellation effect of the internal Dresselhaus term [Phys. Rev. 100, 580 (1955)] with the external electric field induced Rashba one [J. Phys. C 17, 6039 (1984)], both governing the conduction band spin-orbit splitting. These results demonstrate the key role played by the growth direction in the design of spintronic devices.

AB - The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in NIP structures grown on (111)A or (111)B-oriented substrates. In both cases the spin lifetimes are significantly increased by applying an external electric field, but this field has to point along the growth direction for structures grown on (111)A and opposite to it for the ones grown on (111)B. This extended electron spin lifetime is the result of the suppression of the D'yakonov-Perel spin relaxation mechanism [Sov. Phys. Solid State 13, 3023 (1972)] due to the cancellation effect of the internal Dresselhaus term [Phys. Rev. 100, 580 (1955)] with the external electric field induced Rashba one [J. Phys. C 17, 6039 (1984)], both governing the conduction band spin-orbit splitting. These results demonstrate the key role played by the growth direction in the design of spintronic devices.

UR - http://www.scopus.com/inward/record.url?scp=84864241286&partnerID=8YFLogxK

U2 - 10.1063/1.4737007

DO - 10.1063/1.4737007

M3 - Article

AN - SCOPUS:84864241286

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032104

ER -

Growth direction dependence of the electron spin dynamics in {111} GaAs quantum wells

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