Gate voltage dependence of weak localization in bilayer graphene

Zhi Min Liao*, Bing Hong Han, Han Chun Wu, Da Peng Yu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Weak localization modulated by gate voltage in bilayer graphene was studied experimentally. A transition from weak localization [near the carrier charge neutrality point (CNP)] to weak antilocalization (away from the CNP) was found. The suppressed intervalley scattering due to screening of atomically sharp defects and spin-orbit coupling regulated by gate voltage can explain the experimental results well. Our experimental results confirm the theoretical prediction that the weak localization in bilayer graphene is strongly suppressed by the trigonal warping and it is only present in systems with pronounced intervalley scattering.

Original languageEnglish
Article number163110
JournalApplied Physics Letters
Volume97
Issue number16
DOIs
Publication statusPublished - 18 Oct 2010
Externally publishedYes

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