Gate voltage dependence of weak localization in bilayer graphene

Zhi Min Liao; Bing Hong Han; Han Chun Wu; Da Peng Yu

doi:10.1063/1.3505310

Gate voltage dependence of weak localization in bilayer graphene

Zhi Min Liao^*, Bing Hong Han, Han Chun Wu, Da Peng Yu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Weak localization modulated by gate voltage in bilayer graphene was studied experimentally. A transition from weak localization [near the carrier charge neutrality point (CNP)] to weak antilocalization (away from the CNP) was found. The suppressed intervalley scattering due to screening of atomically sharp defects and spin-orbit coupling regulated by gate voltage can explain the experimental results well. Our experimental results confirm the theoretical prediction that the weak localization in bilayer graphene is strongly suppressed by the trigonal warping and it is only present in systems with pronounced intervalley scattering.

Original language	English
Article number	163110
Journal	Applied Physics Letters
Volume	97
Issue number	16
DOIs	https://doi.org/10.1063/1.3505310
Publication status	Published - 18 Oct 2010
Externally published	Yes

Access to Document

10.1063/1.3505310

Cite this

@article{25a500e4fbbf471fb82a3fdac4bf55b3,

title = "Gate voltage dependence of weak localization in bilayer graphene",

abstract = "Weak localization modulated by gate voltage in bilayer graphene was studied experimentally. A transition from weak localization [near the carrier charge neutrality point (CNP)] to weak antilocalization (away from the CNP) was found. The suppressed intervalley scattering due to screening of atomically sharp defects and spin-orbit coupling regulated by gate voltage can explain the experimental results well. Our experimental results confirm the theoretical prediction that the weak localization in bilayer graphene is strongly suppressed by the trigonal warping and it is only present in systems with pronounced intervalley scattering.",

author = "Liao, {Zhi Min} and Han, {Bing Hong} and Wu, {Han Chun} and Yu, {Da Peng}",

year = "2010",

month = oct,

day = "18",

doi = "10.1063/1.3505310",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Gate voltage dependence of weak localization in bilayer graphene

AU - Liao, Zhi Min

AU - Han, Bing Hong

AU - Wu, Han Chun

AU - Yu, Da Peng

PY - 2010/10/18

Y1 - 2010/10/18

N2 - Weak localization modulated by gate voltage in bilayer graphene was studied experimentally. A transition from weak localization [near the carrier charge neutrality point (CNP)] to weak antilocalization (away from the CNP) was found. The suppressed intervalley scattering due to screening of atomically sharp defects and spin-orbit coupling regulated by gate voltage can explain the experimental results well. Our experimental results confirm the theoretical prediction that the weak localization in bilayer graphene is strongly suppressed by the trigonal warping and it is only present in systems with pronounced intervalley scattering.

AB - Weak localization modulated by gate voltage in bilayer graphene was studied experimentally. A transition from weak localization [near the carrier charge neutrality point (CNP)] to weak antilocalization (away from the CNP) was found. The suppressed intervalley scattering due to screening of atomically sharp defects and spin-orbit coupling regulated by gate voltage can explain the experimental results well. Our experimental results confirm the theoretical prediction that the weak localization in bilayer graphene is strongly suppressed by the trigonal warping and it is only present in systems with pronounced intervalley scattering.

UR - http://www.scopus.com/inward/record.url?scp=77958505119&partnerID=8YFLogxK

U2 - 10.1063/1.3505310

DO - 10.1063/1.3505310

M3 - Article

AN - SCOPUS:77958505119

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 163110

ER -

Gate voltage dependence of weak localization in bilayer graphene

Abstract

Access to Document

Other files and links

Fingerprint

Cite this