Four-fold magnetic anisotropy induced by the antiferromagnetic order in FeMn/Co/Cu(001) system

G. Chen; J. Li; F. Z. Liu; J. Zhu; Y. He; J. Wu; Z. Q. Qiu; Y. Z. Wu

doi:10.1063/1.3489985

Four-fold magnetic anisotropy induced by the antiferromagnetic order in FeMn/Co/Cu(001) system

G. Chen^*, J. Li, F. Z. Liu, J. Zhu, Y. He, J. Wu, Z. Q. Qiu, Y. Z. Wu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Single crystalline FeMn/Co bilayers were grown epitaxially on Cu(001) and investigated by magneto-optic Kerr effect (MOKE). By doing the MOKE measurement within a rotating magnetic field, we were able to retrieve quantitatively the anisotropy constant of the ferromagnetic Co layer. We show unambiguously that as the FeMn layer changes from paramagnetic (PM) to antiferromagnetic (AFM) states, it enhances the interfacial magnetic anisotropy at the FeMn/Co interface by an order of magnitude. A thickness dependent study of the magnetic anisotropy constant revealed that this induced magnetic anisotropy may originate from the FeMn/Co interfacial spin frustration.

Original language	English
Article number	073905
Journal	Journal of Applied Physics
Volume	108
Issue number	7
DOIs	https://doi.org/10.1063/1.3489985
Publication status	Published - 1 Oct 2010
Externally published	Yes

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abstract = "Single crystalline FeMn/Co bilayers were grown epitaxially on Cu(001) and investigated by magneto-optic Kerr effect (MOKE). By doing the MOKE measurement within a rotating magnetic field, we were able to retrieve quantitatively the anisotropy constant of the ferromagnetic Co layer. We show unambiguously that as the FeMn layer changes from paramagnetic (PM) to antiferromagnetic (AFM) states, it enhances the interfacial magnetic anisotropy at the FeMn/Co interface by an order of magnitude. A thickness dependent study of the magnetic anisotropy constant revealed that this induced magnetic anisotropy may originate from the FeMn/Co interfacial spin frustration.",

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AU - Chen, G.

AU - Li, J.

AU - Liu, F. Z.

AU - Zhu, J.

AU - He, Y.

AU - Wu, J.

AU - Qiu, Z. Q.

AU - Wu, Y. Z.

PY - 2010/10/1

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N2 - Single crystalline FeMn/Co bilayers were grown epitaxially on Cu(001) and investigated by magneto-optic Kerr effect (MOKE). By doing the MOKE measurement within a rotating magnetic field, we were able to retrieve quantitatively the anisotropy constant of the ferromagnetic Co layer. We show unambiguously that as the FeMn layer changes from paramagnetic (PM) to antiferromagnetic (AFM) states, it enhances the interfacial magnetic anisotropy at the FeMn/Co interface by an order of magnitude. A thickness dependent study of the magnetic anisotropy constant revealed that this induced magnetic anisotropy may originate from the FeMn/Co interfacial spin frustration.

AB - Single crystalline FeMn/Co bilayers were grown epitaxially on Cu(001) and investigated by magneto-optic Kerr effect (MOKE). By doing the MOKE measurement within a rotating magnetic field, we were able to retrieve quantitatively the anisotropy constant of the ferromagnetic Co layer. We show unambiguously that as the FeMn layer changes from paramagnetic (PM) to antiferromagnetic (AFM) states, it enhances the interfacial magnetic anisotropy at the FeMn/Co interface by an order of magnitude. A thickness dependent study of the magnetic anisotropy constant revealed that this induced magnetic anisotropy may originate from the FeMn/Co interfacial spin frustration.

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VL - 108

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

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ER -

Four-fold magnetic anisotropy induced by the antiferromagnetic order in FeMn/Co/Cu(001) system

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