Few-Layer Mote2 Suspended Channel Transistors and Nanoelectromechanical Resonators

Xia Liu; Arnob Islam; Philip X.L. Feng

doi:10.1109/TRANSDUCERS.2019.8808667

Few-Layer Mote₂ Suspended Channel Transistors and Nanoelectromechanical Resonators

Xia Liu, Arnob Islam, Philip X.L. Feng

Case School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Citations (Scopus)

Abstract

Molybdenum ditelluride (MoTe₂) is a rapidly emerging two-dimensional (2D) transition metal dichalcogenide (TMDC) layered material thanks to the features of low energy barrier for phase transition and the sizeable bandgap close to that of silicon (Si). These attractive features make it a focus of substantial research interest in future nanoelectronics. Here, we report on the first demonstration of few-layer MoTe2 suspended channel transistors (SCTs) and nanoelectromechanical resonators operating in the high frequency (HF) regime. MoTe₂ SCTs exhibit On/Off ratio levels at I_On/I_Off ≈ 10⁴. We also present the passivation of MoTe₂ resonators by using hexagonal boron nitride (h-BN) crystal, which essentially creates h-BN/MoTe₂ heterostructure bimorphs. Moreover, we investigate the electrical tuning of the resonator and observe resonance frequency tuning of Δf/f ≈ 13% by varying gate voltage (V_G) from 0 to -16V.

Original language	English
Title of host publication	2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2408-2411
Number of pages	4
ISBN (Electronic)	9781728120072
DOIs	https://doi.org/10.1109/TRANSDUCERS.2019.8808667
Publication status	Published - Jun 2019
Externally published	Yes
Event	20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII - Berlin, Germany Duration: 23 Jun 2019 → 27 Jun 2019

Publication series

Name	2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

Conference

Conference	20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
Country/Territory	Germany
City	Berlin
Period	23/06/19 → 27/06/19

Keywords

2D materials
MoTe
Nanoelectromechanical systems (NEMS)
frequency tuning.
optical interferometry
resonator
suspended channel transistor

Access to Document

10.1109/TRANSDUCERS.2019.8808667

Cite this

Liu, X., Islam, A., & Feng, P. X. L. (2019). Few-Layer Mote₂ Suspended Channel Transistors and Nanoelectromechanical Resonators. In 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII (pp. 2408-2411). Article 8808667 (2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TRANSDUCERS.2019.8808667

Liu, Xia ; Islam, Arnob ; Feng, Philip X.L. / Few-Layer Mote₂ Suspended Channel Transistors and Nanoelectromechanical Resonators. 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 2408-2411 (2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII).

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title = "Few-Layer Mote2 Suspended Channel Transistors and Nanoelectromechanical Resonators",

abstract = "Molybdenum ditelluride (MoTe2) is a rapidly emerging two-dimensional (2D) transition metal dichalcogenide (TMDC) layered material thanks to the features of low energy barrier for phase transition and the sizeable bandgap close to that of silicon (Si). These attractive features make it a focus of substantial research interest in future nanoelectronics. Here, we report on the first demonstration of few-layer MoTe2 suspended channel transistors (SCTs) and nanoelectromechanical resonators operating in the high frequency (HF) regime. MoTe2 SCTs exhibit On/Off ratio levels at IOn/IOff ≈ 104. We also present the passivation of MoTe2 resonators by using hexagonal boron nitride (h-BN) crystal, which essentially creates h-BN/MoTe2 heterostructure bimorphs. Moreover, we investigate the electrical tuning of the resonator and observe resonance frequency tuning of Δf/f ≈ 13% by varying gate voltage (VG) from 0 to -16V.",

keywords = "2D materials, MoTe, Nanoelectromechanical systems (NEMS), frequency tuning., optical interferometry, resonator, suspended channel transistor",

author = "Xia Liu and Arnob Islam and Feng, {Philip X.L.}",

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Liu, X, Islam, A & Feng, PXL 2019, Few-Layer Mote₂ Suspended Channel Transistors and Nanoelectromechanical Resonators. in 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII., 8808667, 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII, Institute of Electrical and Electronics Engineers Inc., pp. 2408-2411, 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII, Berlin, Germany, 23/06/19. https://doi.org/10.1109/TRANSDUCERS.2019.8808667

Few-Layer Mote₂ Suspended Channel Transistors and Nanoelectromechanical Resonators. / Liu, Xia; Islam, Arnob; Feng, Philip X.L.
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. Institute of Electrical and Electronics Engineers Inc., 2019. p. 2408-2411 8808667 (2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Islam, Arnob

AU - Feng, Philip X.L.

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N2 - Molybdenum ditelluride (MoTe2) is a rapidly emerging two-dimensional (2D) transition metal dichalcogenide (TMDC) layered material thanks to the features of low energy barrier for phase transition and the sizeable bandgap close to that of silicon (Si). These attractive features make it a focus of substantial research interest in future nanoelectronics. Here, we report on the first demonstration of few-layer MoTe2 suspended channel transistors (SCTs) and nanoelectromechanical resonators operating in the high frequency (HF) regime. MoTe2 SCTs exhibit On/Off ratio levels at IOn/IOff ≈ 104. We also present the passivation of MoTe2 resonators by using hexagonal boron nitride (h-BN) crystal, which essentially creates h-BN/MoTe2 heterostructure bimorphs. Moreover, we investigate the electrical tuning of the resonator and observe resonance frequency tuning of Δf/f ≈ 13% by varying gate voltage (VG) from 0 to -16V.

AB - Molybdenum ditelluride (MoTe2) is a rapidly emerging two-dimensional (2D) transition metal dichalcogenide (TMDC) layered material thanks to the features of low energy barrier for phase transition and the sizeable bandgap close to that of silicon (Si). These attractive features make it a focus of substantial research interest in future nanoelectronics. Here, we report on the first demonstration of few-layer MoTe2 suspended channel transistors (SCTs) and nanoelectromechanical resonators operating in the high frequency (HF) regime. MoTe2 SCTs exhibit On/Off ratio levels at IOn/IOff ≈ 104. We also present the passivation of MoTe2 resonators by using hexagonal boron nitride (h-BN) crystal, which essentially creates h-BN/MoTe2 heterostructure bimorphs. Moreover, we investigate the electrical tuning of the resonator and observe resonance frequency tuning of Δf/f ≈ 13% by varying gate voltage (VG) from 0 to -16V.

KW - 2D materials

KW - MoTe

KW - Nanoelectromechanical systems (NEMS)

KW - frequency tuning.

KW - optical interferometry

KW - resonator

KW - suspended channel transistor

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DO - 10.1109/TRANSDUCERS.2019.8808667

M3 - Conference contribution

AN - SCOPUS:85071924671

T3 - 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

SP - 2408

EP - 2411

BT - 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 23 June 2019 through 27 June 2019

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Liu X, Islam A, Feng PXL. Few-Layer Mote₂ Suspended Channel Transistors and Nanoelectromechanical Resonators. In 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. Institute of Electrical and Electronics Engineers Inc. 2019. p. 2408-2411. 8808667. (2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII). doi: 10.1109/TRANSDUCERS.2019.8808667