Fabrication of patterned boron-based nanowires and their field emission properties

J. F. Tian, C. Li, Y. Huang, Y. Tian, L. H. Bao, C. M. Shen, H. J. Gao

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The cold cathodes based on the one-dimensional nanoscale materials have exhibited excellent field emission (FE) properties in contrast with the traditional materials. The patterning of nanoscale cold cathodes can dramatically improve FE properties and increase FE enhancement factor by reducing screen effects between nanomaterials. Large-area patterned boron-based 1D nanostructure (B and B4C NWs) have been synthesized using chemical vapor deposition (CVD). Field emission measurements of patterned B and B4C NWs films show that their turn-on electric field are lower than that of continuous B and B4C NWs films.

Original languageEnglish
Title of host publicationIVNC 2015 - Technical Digest
Subtitle of host publication28th International Vacuum Nanoelectronics Conference
EditorsQionghui Zou, Juncong She, Peng Ye, Jun Chen, Shaozhi Deng
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages144-145
Number of pages2
ISBN (Electronic)9781467393577
DOIs
Publication statusPublished - 26 Aug 2015
Externally publishedYes
Event28th International Vacuum Nanoelectronics Conference, IVNC 2015 - Guangzhou, China
Duration: 13 Jul 201517 Jul 2015

Publication series

NameIVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference

Conference

Conference28th International Vacuum Nanoelectronics Conference, IVNC 2015
Country/TerritoryChina
CityGuangzhou
Period13/07/1517/07/15

Keywords

  • Boron-based Nanowires
  • Field emission properties
  • Patterned

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