Fabrication and electrical properties of a carbon nanotube quantum dot

Jing Hai Fang; Li Wei Liu; Wen Jie Kong; Jian Zhen Cai; Li Lü

doi:10.1088/1009-1963/15/5/034

Fabrication and electrical properties of a carbon nanotube quantum dot

Jing Hai Fang^*, Li Wei Liu, Wen Jie Kong, Jian Zhen Cai, Li Lü

^*Corresponding author for this work

CAS - Institute of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Single-walled carbon nanotubes (SWNTs) were synthesized by pyrolyzing methane (CH₄) at a temperature of 900°C on SiO₂ substrates pre-coated with iron nano-particles. Electrical contacts were fabricated onto one of the SWNTs by using an electron beam lithography process. Coulomb blockade and single-electron tunnelling characters were found at low temperatures, indicating that the SWNT in-between the electrodes forms a quantum dot. It is found that the Coulomb gap of the quantum dot is about 8.57 meV and the factor α, which converts the gate voltage to the true electrostatic potential shift, is around 200 for this device.

Original language	English
Pages (from-to)	1071-1074
Number of pages	4
Journal	Chinese Physics
Volume	15
Issue number	5
DOIs	https://doi.org/10.1088/1009-1963/15/5/034
Publication status	Published - 1 May 2006
Externally published	Yes

Keywords

Carbon nanotube
Quantum dot

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10.1088/1009-1963/15/5/034

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abstract = "Single-walled carbon nanotubes (SWNTs) were synthesized by pyrolyzing methane (CH4) at a temperature of 900°C on SiO2 substrates pre-coated with iron nano-particles. Electrical contacts were fabricated onto one of the SWNTs by using an electron beam lithography process. Coulomb blockade and single-electron tunnelling characters were found at low temperatures, indicating that the SWNT in-between the electrodes forms a quantum dot. It is found that the Coulomb gap of the quantum dot is about 8.57 meV and the factor α, which converts the gate voltage to the true electrostatic potential shift, is around 200 for this device.",

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AU - Fang, Jing Hai

AU - Liu, Li Wei

AU - Kong, Wen Jie

AU - Cai, Jian Zhen

AU - Lü, Li

PY - 2006/5/1

Y1 - 2006/5/1

N2 - Single-walled carbon nanotubes (SWNTs) were synthesized by pyrolyzing methane (CH4) at a temperature of 900°C on SiO2 substrates pre-coated with iron nano-particles. Electrical contacts were fabricated onto one of the SWNTs by using an electron beam lithography process. Coulomb blockade and single-electron tunnelling characters were found at low temperatures, indicating that the SWNT in-between the electrodes forms a quantum dot. It is found that the Coulomb gap of the quantum dot is about 8.57 meV and the factor α, which converts the gate voltage to the true electrostatic potential shift, is around 200 for this device.

AB - Single-walled carbon nanotubes (SWNTs) were synthesized by pyrolyzing methane (CH4) at a temperature of 900°C on SiO2 substrates pre-coated with iron nano-particles. Electrical contacts were fabricated onto one of the SWNTs by using an electron beam lithography process. Coulomb blockade and single-electron tunnelling characters were found at low temperatures, indicating that the SWNT in-between the electrodes forms a quantum dot. It is found that the Coulomb gap of the quantum dot is about 8.57 meV and the factor α, which converts the gate voltage to the true electrostatic potential shift, is around 200 for this device.

KW - Carbon nanotube

KW - Quantum dot

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DO - 10.1088/1009-1963/15/5/034

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SN - 1009-1963

VL - 15

SP - 1071

EP - 1074

JO - Chinese Physics

JF - Chinese Physics

IS - 5

ER -

Fabrication and electrical properties of a carbon nanotube quantum dot

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Keywords

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