Extra-large magnetoresistance in Fe/In2O3 granular films

Bao Xin Huang; Yi Hua Liu; Jun Hua Wang; Lin Zhang; Ru Zhen Zhang; Lian Sheng Zhang; Liang Mo Mei

doi:10.1088/0256-307X/19/7/338

Extra-large magnetoresistance in Fe/In₂O₃ granular films

Bao Xin Huang^*, Yi Hua Liu, Jun Hua Wang, Lin Zhang, Ru Zhen Zhang, Lian Sheng Zhang, Liang Mo Mei

^*Corresponding author for this work

Shandong University

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Nanogranular Fe_0.35/(In₂O₃)_0.65 films with complex magnetic structure were prepared by the ri sputtering method. An extra-large magnetoresistance up to 506% was obtained at 2.2 K, which is two orders of magnitude larger than that obtained at room temperature. This is related to the interaction with the impurities influencing the local magnetization, which is quite different from the spin-dependent tunnelling effect at room temperature. The interspacing Fe atoms dispersed in the In₂O₃ matrix play an important role in the transportation properties of carriers at low temperature.

Original language	English
Article number	338
Pages (from-to)	1004-1006
Number of pages	3
Journal	Chinese Physics Letters
Volume	19
Issue number	7
DOIs	https://doi.org/10.1088/0256-307X/19/7/338
Publication status	Published - 2002
Externally published	Yes

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title = "Extra-large magnetoresistance in Fe/In2O3 granular films",

abstract = "Nanogranular Fe0.35/(In2O3)0.65 films with complex magnetic structure were prepared by the ri sputtering method. An extra-large magnetoresistance up to 506% was obtained at 2.2 K, which is two orders of magnitude larger than that obtained at room temperature. This is related to the interaction with the impurities influencing the local magnetization, which is quite different from the spin-dependent tunnelling effect at room temperature. The interspacing Fe atoms dispersed in the In2O3 matrix play an important role in the transportation properties of carriers at low temperature.",

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T1 - Extra-large magnetoresistance in Fe/In2O3 granular films

AU - Huang, Bao Xin

AU - Liu, Yi Hua

AU - Wang, Jun Hua

AU - Zhang, Lin

AU - Zhang, Ru Zhen

AU - Zhang, Lian Sheng

AU - Mei, Liang Mo

PY - 2002

Y1 - 2002

N2 - Nanogranular Fe0.35/(In2O3)0.65 films with complex magnetic structure were prepared by the ri sputtering method. An extra-large magnetoresistance up to 506% was obtained at 2.2 K, which is two orders of magnitude larger than that obtained at room temperature. This is related to the interaction with the impurities influencing the local magnetization, which is quite different from the spin-dependent tunnelling effect at room temperature. The interspacing Fe atoms dispersed in the In2O3 matrix play an important role in the transportation properties of carriers at low temperature.

AB - Nanogranular Fe0.35/(In2O3)0.65 films with complex magnetic structure were prepared by the ri sputtering method. An extra-large magnetoresistance up to 506% was obtained at 2.2 K, which is two orders of magnitude larger than that obtained at room temperature. This is related to the interaction with the impurities influencing the local magnetization, which is quite different from the spin-dependent tunnelling effect at room temperature. The interspacing Fe atoms dispersed in the In2O3 matrix play an important role in the transportation properties of carriers at low temperature.

UR - http://www.scopus.com/inward/record.url?scp=0036060594&partnerID=8YFLogxK

U2 - 10.1088/0256-307X/19/7/338

DO - 10.1088/0256-307X/19/7/338

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SP - 1004

EP - 1006

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 7

M1 - 338

ER -

Extra-large magnetoresistance in Fe/In₂O₃ granular films

Abstract

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