Electronic transport properties of silicon nanowire cage

Shenqiu Mo; Dengke Ma; Lina Yang; Meng An; Zhiyu Liu; Nuo Yang

doi:10.1615/ihtc16.mpe.022406

Electronic transport properties of silicon nanowire cage

Shenqiu Mo, Dengke Ma, Lina Yang, Meng An, Zhiyu Liu, Nuo Yang^*

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

It is found that the nano-cross-junction effect can lead to extremely low thermal conductivity in Silicon-nanowire-cage (SiNWC). The topological structure of SiNWC may also lead to one-dimensional electronic transport in SiNWC, which can realize high ZT combined with nano-cross-juntion effect. We studied the electronic transport properties of n-type SiNWC at room temperature. The electronic structure reflects quantum confinement in SiNWC while the conductivity and electronic thermal conductivity are restricted by the cross-sectional area, reaching even lower value compared to those of 1.1nm Si nanowire. Consequently, electronic transport in SiNWC should be typically one-dimensional.

Original language	English
Pages (from-to)	6023-6027
Number of pages	5
Journal	International Heat Transfer Conference
Volume	2018-August
DOIs	https://doi.org/10.1615/ihtc16.mpe.022406
Publication status	Published - 2018
Externally published	Yes
Event	16th International Heat Transfer Conference, IHTC 2018 - Beijing, China Duration: 10 Aug 2018 → 15 Aug 2018

Keywords

Electronic transport
One dimension
Silicon-nanowire-cage

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10.1615/ihtc16.mpe.022406

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title = "Electronic transport properties of silicon nanowire cage",

abstract = "It is found that the nano-cross-junction effect can lead to extremely low thermal conductivity in Silicon-nanowire-cage (SiNWC). The topological structure of SiNWC may also lead to one-dimensional electronic transport in SiNWC, which can realize high ZT combined with nano-cross-juntion effect. We studied the electronic transport properties of n-type SiNWC at room temperature. The electronic structure reflects quantum confinement in SiNWC while the conductivity and electronic thermal conductivity are restricted by the cross-sectional area, reaching even lower value compared to those of 1.1nm Si nanowire. Consequently, electronic transport in SiNWC should be typically one-dimensional.",

keywords = "Electronic transport, One dimension, Silicon-nanowire-cage",

author = "Shenqiu Mo and Dengke Ma and Lina Yang and Meng An and Zhiyu Liu and Nuo Yang",

note = "Publisher Copyright: {\textcopyright} 2018 International Heat Transfer Conference. All rights reserved.; 16th International Heat Transfer Conference, IHTC 2018 ; Conference date: 10-08-2018 Through 15-08-2018",

year = "2018",

doi = "10.1615/ihtc16.mpe.022406",

language = "English",

volume = "2018-August",

pages = "6023--6027",

journal = "International Heat Transfer Conference",

issn = "2377-424X",

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TY - JOUR

T1 - Electronic transport properties of silicon nanowire cage

AU - Mo, Shenqiu

AU - Ma, Dengke

AU - Yang, Lina

AU - An, Meng

AU - Liu, Zhiyu

AU - Yang, Nuo

PY - 2018

Y1 - 2018

N2 - It is found that the nano-cross-junction effect can lead to extremely low thermal conductivity in Silicon-nanowire-cage (SiNWC). The topological structure of SiNWC may also lead to one-dimensional electronic transport in SiNWC, which can realize high ZT combined with nano-cross-juntion effect. We studied the electronic transport properties of n-type SiNWC at room temperature. The electronic structure reflects quantum confinement in SiNWC while the conductivity and electronic thermal conductivity are restricted by the cross-sectional area, reaching even lower value compared to those of 1.1nm Si nanowire. Consequently, electronic transport in SiNWC should be typically one-dimensional.

AB - It is found that the nano-cross-junction effect can lead to extremely low thermal conductivity in Silicon-nanowire-cage (SiNWC). The topological structure of SiNWC may also lead to one-dimensional electronic transport in SiNWC, which can realize high ZT combined with nano-cross-juntion effect. We studied the electronic transport properties of n-type SiNWC at room temperature. The electronic structure reflects quantum confinement in SiNWC while the conductivity and electronic thermal conductivity are restricted by the cross-sectional area, reaching even lower value compared to those of 1.1nm Si nanowire. Consequently, electronic transport in SiNWC should be typically one-dimensional.

KW - Electronic transport

KW - One dimension

KW - Silicon-nanowire-cage

UR - http://www.scopus.com/inward/record.url?scp=85068342979&partnerID=8YFLogxK

U2 - 10.1615/ihtc16.mpe.022406

DO - 10.1615/ihtc16.mpe.022406

M3 - Conference article

AN - SCOPUS:85068342979

SN - 2377-424X

VL - 2018-August

SP - 6023

EP - 6027

JO - International Heat Transfer Conference

JF - International Heat Transfer Conference

T2 - 16th International Heat Transfer Conference, IHTC 2018

Y2 - 10 August 2018 through 15 August 2018

ER -

Electronic transport properties of silicon nanowire cage

Abstract

Keywords

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