Electrodeposition of carbon nitride thin films having high nitrogen content on indium tin oxide coated glass

Chao Li; Chuan Bao Cao; He Sun Zhu

Electrodeposition of carbon nitride thin films having high nitrogen content on indium tin oxide coated glass

Chao Li^*, Chuan Bao Cao, He Sun Zhu

^*Corresponding author for this work

School of Material Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Saturated solution of dicyandiamide in acetonitrile was selected as the electrolyte in an attempt to deposit carbon nitride films onto glass substrates coated with indium tin oxide (ITO-coated glass). The result of X-ray photoelectron spectroscopy (XPS) showed that the maximum value of the N/C atomic ratio in the films was 1.22, which was quite close to the stoichiometric value of C₃N₄. Fourier transform infrared (FTIR) spectroscopy supported the existence of C-N, C=N covalent bonds. Optical band gap E_opt of CN_x films determined by Tauc's relation was wide, and the E_opt of the sample obtained at 50°C, 1250 V was 2.32 eV. It was found that carbon nitride films of high nitrogen content could be obtained under the conditions of voltages from 1100 V to 1300 V and temperatures from 30°C to 50°C.

Original language	English
Pages (from-to)	86-89
Number of pages	4
Journal	Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology
Volume	24
Issue number	1
Publication status	Published - Jan 2004

Keywords

Carbon nitride
Electrodeposition
Optical band gap

Cite this

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title = "Electrodeposition of carbon nitride thin films having high nitrogen content on indium tin oxide coated glass",

abstract = "Saturated solution of dicyandiamide in acetonitrile was selected as the electrolyte in an attempt to deposit carbon nitride films onto glass substrates coated with indium tin oxide (ITO-coated glass). The result of X-ray photoelectron spectroscopy (XPS) showed that the maximum value of the N/C atomic ratio in the films was 1.22, which was quite close to the stoichiometric value of C3N4. Fourier transform infrared (FTIR) spectroscopy supported the existence of C-N, C=N covalent bonds. Optical band gap Eopt of CNx films determined by Tauc's relation was wide, and the Eopt of the sample obtained at 50°C, 1250 V was 2.32 eV. It was found that carbon nitride films of high nitrogen content could be obtained under the conditions of voltages from 1100 V to 1300 V and temperatures from 30°C to 50°C.",

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T1 - Electrodeposition of carbon nitride thin films having high nitrogen content on indium tin oxide coated glass

AU - Li, Chao

AU - Cao, Chuan Bao

AU - Zhu, He Sun

PY - 2004/1

Y1 - 2004/1

N2 - Saturated solution of dicyandiamide in acetonitrile was selected as the electrolyte in an attempt to deposit carbon nitride films onto glass substrates coated with indium tin oxide (ITO-coated glass). The result of X-ray photoelectron spectroscopy (XPS) showed that the maximum value of the N/C atomic ratio in the films was 1.22, which was quite close to the stoichiometric value of C3N4. Fourier transform infrared (FTIR) spectroscopy supported the existence of C-N, C=N covalent bonds. Optical band gap Eopt of CNx films determined by Tauc's relation was wide, and the Eopt of the sample obtained at 50°C, 1250 V was 2.32 eV. It was found that carbon nitride films of high nitrogen content could be obtained under the conditions of voltages from 1100 V to 1300 V and temperatures from 30°C to 50°C.

AB - Saturated solution of dicyandiamide in acetonitrile was selected as the electrolyte in an attempt to deposit carbon nitride films onto glass substrates coated with indium tin oxide (ITO-coated glass). The result of X-ray photoelectron spectroscopy (XPS) showed that the maximum value of the N/C atomic ratio in the films was 1.22, which was quite close to the stoichiometric value of C3N4. Fourier transform infrared (FTIR) spectroscopy supported the existence of C-N, C=N covalent bonds. Optical band gap Eopt of CNx films determined by Tauc's relation was wide, and the Eopt of the sample obtained at 50°C, 1250 V was 2.32 eV. It was found that carbon nitride films of high nitrogen content could be obtained under the conditions of voltages from 1100 V to 1300 V and temperatures from 30°C to 50°C.

KW - Carbon nitride

KW - Electrodeposition

KW - Optical band gap

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M3 - Article

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SN - 1001-0645

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JO - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology

JF - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology

IS - 1

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Electrodeposition of carbon nitride thin films having high nitrogen content on indium tin oxide coated glass

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Keywords

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