Electrical and optical properties of single zigzag SnO2 nanobelts

Faheem K. Butt, Chuanbao Cao*, Waheed S. Khan, Muhammad Safdar, Xuewen Fu, Muhammad Tahir, Faryal Idrees, Zulfiqar Ali, Ghulam Nabi, Dapeng Yu

*Corresponding author for this work

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Abstract

We report here on investigations of electrical and optical properties of single zigzag SnO2 nanobelts. Large scale zigzag nanobelts were obtained on a silicon substrate by a Chemical Vapor Deposition (CVD) approach. The average value of carrier concentrations (Nd) and electron mobility (μ) were calculated to be 1.39 × 1018 cm -3 and 70.76 cm2 V-1 s-1, respectively. Room temperature PL exhibits a broad emission peak centred at 600 nm. Three Raman active modes at 474.8, 633.8, 775.8 cm-1 were observed. Electron paramagnetic resonance measurements suggest the presence of many singly ionized states.

Original languageEnglish
Pages (from-to)2106-2112
Number of pages7
JournalCrystEngComm
Volume15
Issue number11
DOIs
Publication statusPublished - 21 Mar 2013

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Butt, F. K., Cao, C., Khan, W. S., Safdar, M., Fu, X., Tahir, M., Idrees, F., Ali, Z., Nabi, G., & Yu, D. (2013). Electrical and optical properties of single zigzag SnO2 nanobelts. CrystEngComm, 15(11), 2106-2112. https://doi.org/10.1039/c2ce26728d