Electrical and optical properties of single zigzag SnO2 nanobelts

Faheem K. Butt; Chuanbao Cao; Waheed S. Khan; Muhammad Safdar; Xuewen Fu; Muhammad Tahir; Faryal Idrees; Zulfiqar Ali; Ghulam Nabi; Dapeng Yu

doi:10.1039/c2ce26728d

Electrical and optical properties of single zigzag SnO₂ nanobelts

Faheem K. Butt, Chuanbao Cao^*, Waheed S. Khan, Muhammad Safdar, Xuewen Fu, Muhammad Tahir, Faryal Idrees, Zulfiqar Ali, Ghulam Nabi, Dapeng Yu

^*Corresponding author for this work

School of Material Science and Engineering

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31 Citations (Scopus)

Abstract

We report here on investigations of electrical and optical properties of single zigzag SnO₂ nanobelts. Large scale zigzag nanobelts were obtained on a silicon substrate by a Chemical Vapor Deposition (CVD) approach. The average value of carrier concentrations (N_d) and electron mobility (μ) were calculated to be 1.39 × 10¹⁸ cm ^-3 and 70.76 cm² V^-1 s^-1, respectively. Room temperature PL exhibits a broad emission peak centred at 600 nm. Three Raman active modes at 474.8, 633.8, 775.8 cm^-1 were observed. Electron paramagnetic resonance measurements suggest the presence of many singly ionized states.

Original language	English
Pages (from-to)	2106-2112
Number of pages	7
Journal	CrystEngComm
Volume	15
Issue number	11
DOIs	https://doi.org/10.1039/c2ce26728d
Publication status	Published - 21 Mar 2013

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abstract = "We report here on investigations of electrical and optical properties of single zigzag SnO2 nanobelts. Large scale zigzag nanobelts were obtained on a silicon substrate by a Chemical Vapor Deposition (CVD) approach. The average value of carrier concentrations (Nd) and electron mobility (μ) were calculated to be 1.39 × 1018 cm -3 and 70.76 cm2 V-1 s-1, respectively. Room temperature PL exhibits a broad emission peak centred at 600 nm. Three Raman active modes at 474.8, 633.8, 775.8 cm-1 were observed. Electron paramagnetic resonance measurements suggest the presence of many singly ionized states.",

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AU - Butt, Faheem K.

AU - Cao, Chuanbao

AU - Khan, Waheed S.

AU - Safdar, Muhammad

AU - Fu, Xuewen

AU - Tahir, Muhammad

AU - Idrees, Faryal

AU - Ali, Zulfiqar

AU - Nabi, Ghulam

AU - Yu, Dapeng

PY - 2013/3/21

Y1 - 2013/3/21

N2 - We report here on investigations of electrical and optical properties of single zigzag SnO2 nanobelts. Large scale zigzag nanobelts were obtained on a silicon substrate by a Chemical Vapor Deposition (CVD) approach. The average value of carrier concentrations (Nd) and electron mobility (μ) were calculated to be 1.39 × 1018 cm -3 and 70.76 cm2 V-1 s-1, respectively. Room temperature PL exhibits a broad emission peak centred at 600 nm. Three Raman active modes at 474.8, 633.8, 775.8 cm-1 were observed. Electron paramagnetic resonance measurements suggest the presence of many singly ionized states.

AB - We report here on investigations of electrical and optical properties of single zigzag SnO2 nanobelts. Large scale zigzag nanobelts were obtained on a silicon substrate by a Chemical Vapor Deposition (CVD) approach. The average value of carrier concentrations (Nd) and electron mobility (μ) were calculated to be 1.39 × 1018 cm -3 and 70.76 cm2 V-1 s-1, respectively. Room temperature PL exhibits a broad emission peak centred at 600 nm. Three Raman active modes at 474.8, 633.8, 775.8 cm-1 were observed. Electron paramagnetic resonance measurements suggest the presence of many singly ionized states.

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Electrical and optical properties of single zigzag SnO₂ nanobelts

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