TY - JOUR
T1 - Effects of SiO2 and TiO2 on resistance stabilities of flexible indium-tin-oxide films prepared by ion assisted deposition
AU - Li, Yuqiong
AU - Yu, Zhinong
AU - Wang, Wuyu
AU - Fan, Yuejiang
AU - Ding, Zhao
AU - Xue, Wei
PY - 2009/12
Y1 - 2009/12
N2 - Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide (ITO) films were prepared on polyethylene terephthalate (PET) substrates by ion assisted deposition (IAD) at room temperature, and the effects of SiO2 and TiO2 on the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO2 or TiO2 buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. ITO films with SiO2 buffer layer have better resistance stabilities compared to ones with TiO2 buffer layer after the ITO films are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO2 is stronger than that of TiO2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO 2 and TiO2 buffer layers can effectively improve the crystallinity of ITO films in (400), (440) directions.
AB - Inorganic buffer layers such as SiO2 or TiO2 and transparent conductive indium-tin-oxide (ITO) films were prepared on polyethylene terephthalate (PET) substrates by ion assisted deposition (IAD) at room temperature, and the effects of SiO2 and TiO2 on the bending resistance performance of flexible ITO films were investigated. The results show that ITO films with SiO2 or TiO2 buffer layer have better resistance stabilities compared to ones without the buffer layer when the ITO films are inwards bent at a bending radius more than 1.2 cm and when the ITO films are outwards bent at a bending radius from 0.8 cm to 1.2 cm. ITO films with SiO2 buffer layer have better resistance stabilities compared to ones with TiO2 buffer layer after the ITO films are bent several hundreds of cycles at the same bending radius, for the adhesion of SiO2 is stronger than that of TiO2. The compressive stress resulted from inward bending leads to the formation of more defects in the ITO films compared with the tensile stress arising from outward bending. SiO 2 and TiO2 buffer layers can effectively improve the crystallinity of ITO films in (400), (440) directions.
KW - Bending resistance performance
KW - Indium-tin-oxide (ITO)
KW - Inorganic buffer layers
KW - Ion assisted deposition (IAD)
KW - Stress
UR - http://www.scopus.com/inward/record.url?scp=72949115051&partnerID=8YFLogxK
U2 - 10.1007/s12598-009-0108-1
DO - 10.1007/s12598-009-0108-1
M3 - Article
AN - SCOPUS:72949115051
SN - 1001-0521
VL - 28
SP - 559
EP - 563
JO - Rare Metals
JF - Rare Metals
IS - 6
ER -