Controlled Growth of 3R Phase Tantalum Diselenide and Its Enhanced Superconductivity

Ya Deng; Yuanming Lai; Xiaoxu Zhao; Xiaowei Wang; Chao Zhu; Ke Huang; Chao Zhu; Jiadong Zhou; Qingsheng Zeng; Ruihuan Duan; Qundong Fu; Lixing Kang; Yang Liu; Stephen J. Pennycook; X. Renshaw Wang; Zheng Liu

doi:10.1021/jacs.9b11673

Controlled Growth of 3R Phase Tantalum Diselenide and Its Enhanced Superconductivity

Ya Deng, Yuanming Lai, Xiaoxu Zhao, Xiaowei Wang, Chao Zhu, Ke Huang, Chao Zhu, Jiadong Zhou, Qingsheng Zeng, Ruihuan Duan, Qundong Fu, Lixing Kang, Yang Liu, Stephen J. Pennycook, X. Renshaw Wang, Zheng Liu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Transition metal dichalcogenides (TMDs) have become a playground for exploring rich physical phenomena like superconductivity and charge-density-waves (CDW). Here, we report the synthesis of the atom-thin TaSe₂ with a rare 3R phase and enhanced superconductivity. The 3R phase is achieved by an ambient pressure chemical vapor deposition (CVD) strategy and confirmed by the high-resolution aberration-corrected STEM. Lowerature transport data reveal an enhanced superconducting transition temperature (T_c) of 1.6 K in the 3R-TaSe₂, which undoubtedly breaks the traditional perception of TaSe₂ crystal as a material with T_c close to 0 K. This work demonstrates the strength of ambient pressure CVD in the exploration of crystal polymorphism, highlights a decisive role of layer stacking order in the superconducting transition, and provides fresh insights on manipulating crystal structures to gain access to enhanced T_c.

Original language	English
Pages (from-to)	2948-2955
Number of pages	8
Journal	Journal of the American Chemical Society
Volume	142
Issue number	6
DOIs	https://doi.org/10.1021/jacs.9b11673
Publication status	Published - 12 Feb 2020
Externally published	Yes

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title = "Controlled Growth of 3R Phase Tantalum Diselenide and Its Enhanced Superconductivity",

abstract = "Transition metal dichalcogenides (TMDs) have become a playground for exploring rich physical phenomena like superconductivity and charge-density-waves (CDW). Here, we report the synthesis of the atom-thin TaSe2 with a rare 3R phase and enhanced superconductivity. The 3R phase is achieved by an ambient pressure chemical vapor deposition (CVD) strategy and confirmed by the high-resolution aberration-corrected STEM. Lowerature transport data reveal an enhanced superconducting transition temperature (Tc) of 1.6 K in the 3R-TaSe2, which undoubtedly breaks the traditional perception of TaSe2 crystal as a material with Tc close to 0 K. This work demonstrates the strength of ambient pressure CVD in the exploration of crystal polymorphism, highlights a decisive role of layer stacking order in the superconducting transition, and provides fresh insights on manipulating crystal structures to gain access to enhanced Tc.",

author = "Ya Deng and Yuanming Lai and Xiaoxu Zhao and Xiaowei Wang and Chao Zhu and Ke Huang and Chao Zhu and Jiadong Zhou and Qingsheng Zeng and Ruihuan Duan and Qundong Fu and Lixing Kang and Yang Liu and Pennycook, {Stephen J.} and Wang, {X. Renshaw} and Zheng Liu",

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doi = "10.1021/jacs.9b11673",

language = "English",

volume = "142",

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T1 - Controlled Growth of 3R Phase Tantalum Diselenide and Its Enhanced Superconductivity

AU - Deng, Ya

AU - Lai, Yuanming

AU - Zhao, Xiaoxu

AU - Wang, Xiaowei

AU - Zhu, Chao

AU - Huang, Ke

AU - Zhu, Chao

AU - Zhou, Jiadong

AU - Zeng, Qingsheng

AU - Duan, Ruihuan

AU - Fu, Qundong

AU - Kang, Lixing

AU - Liu, Yang

AU - Pennycook, Stephen J.

AU - Wang, X. Renshaw

AU - Liu, Zheng

PY - 2020/2/12

Y1 - 2020/2/12

N2 - Transition metal dichalcogenides (TMDs) have become a playground for exploring rich physical phenomena like superconductivity and charge-density-waves (CDW). Here, we report the synthesis of the atom-thin TaSe2 with a rare 3R phase and enhanced superconductivity. The 3R phase is achieved by an ambient pressure chemical vapor deposition (CVD) strategy and confirmed by the high-resolution aberration-corrected STEM. Lowerature transport data reveal an enhanced superconducting transition temperature (Tc) of 1.6 K in the 3R-TaSe2, which undoubtedly breaks the traditional perception of TaSe2 crystal as a material with Tc close to 0 K. This work demonstrates the strength of ambient pressure CVD in the exploration of crystal polymorphism, highlights a decisive role of layer stacking order in the superconducting transition, and provides fresh insights on manipulating crystal structures to gain access to enhanced Tc.

AB - Transition metal dichalcogenides (TMDs) have become a playground for exploring rich physical phenomena like superconductivity and charge-density-waves (CDW). Here, we report the synthesis of the atom-thin TaSe2 with a rare 3R phase and enhanced superconductivity. The 3R phase is achieved by an ambient pressure chemical vapor deposition (CVD) strategy and confirmed by the high-resolution aberration-corrected STEM. Lowerature transport data reveal an enhanced superconducting transition temperature (Tc) of 1.6 K in the 3R-TaSe2, which undoubtedly breaks the traditional perception of TaSe2 crystal as a material with Tc close to 0 K. This work demonstrates the strength of ambient pressure CVD in the exploration of crystal polymorphism, highlights a decisive role of layer stacking order in the superconducting transition, and provides fresh insights on manipulating crystal structures to gain access to enhanced Tc.

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AN - SCOPUS:85079318934

SN - 0002-7863

VL - 142

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EP - 2955

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 6

ER -

Controlled Growth of 3R Phase Tantalum Diselenide and Its Enhanced Superconductivity

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