Controllable Growth of 2D V3S5 Single Crystal by Chemical Vapor Deposition

Ping Wang, Qi Feng, Weikang Dong, Denan Kong, Yang Yang, Lin Jia, Jijian Liu, Chunyu Zhao, Dan Guo, Ruifeng Tian, Shoujun Zheng, Junxi Duan*, Jiadong Zhou*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

2D intercalated vanadium chalcogenides have attracted intensive interest based on their physical properties and potential applications. However, controllable synthesis of the intercalated vanadium chalcogenides via chemical vapor deposition is still a big challenge. Here, a binary metal precursor co-reaction growth mechanism to manipulate the evaporation rate of vanadium precursors is reported, thus the intercalated 2D V1+XS2 – V3S5 single crystal can be controllably synthesized. The quality of 2D V3S5 nanosheets is identified by Raman spectroscopy and high-resolution scanning transmission electron microscopy. Interestingly, a phase transition in 2D metallic V3S5 nanosheets is observed at 20 K. Meanwhile, the resistance upturn and unsaturated negative magnetoresistance induced by electron–electron interaction is confirmed. This work proposes a new strategy to synthesize the 2D intercalated VxSy single crystals with different compositions for studying their excellent properties and potential applications.

Original languageEnglish
Article number2308356
JournalAdvanced Functional Materials
Volume34
Issue number1
DOIs
Publication statusPublished - 2 Jan 2024

Keywords

  • VS
  • chemical vapor deposition
  • nonstoichiometric
  • phase transitions
  • vanadium chalcogenides

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