Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents

Yaoqiang Zhou, Lei Tong, Zefeng Chen, Li Tao, Yue Pang, Jian Bin Xu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Two-dimensional (2D) materials have been considered promising candidates for future low power-dissipation and reconfigurable integrated circuit applications. However, 2D transistors with intrinsic ambipolar transport polarity are usually affected by large off-state leakage currents and small on/off ratios. Here, we report the realization of a reconfigurable Schottky junction field-effect transistor (SJFET) in an asymmetric van der Waals contact geometry, showing a balanced and switchable n- and p-unipolarity with the I ds on/off ratio kept >106. Meanwhile, the static leakage power consumption was suppressed to 10−5 nW. The SJFET worked as a reversible Schottky rectifier with an ideality factor of ~1.0 and a tuned rectifying ratio from 3 × 106 to 2.5 × 10−6. This empowered the SJFET with a reconfigurable photovoltaic performance in which the sign of the open-circuit voltage and photo-responsivity were substantially switched. This polarity-reversible SJFET paves an alternative way to develop reconfigurable 2D devices for low-power-consumption photovoltaic logic circuits.

Original languageEnglish
Article number4270
JournalNature Communications
Volume14
Issue number1
DOIs
Publication statusPublished - Dec 2023

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