Abstract
The dielectric properties of a polymer-derived amorphous silicon carbonitride were measured at different frequencies and temperatures. The results revealed that the material underwent an interfacial-charge polarization process. This process resulted in an S-shaped frequency dependence of the dielectric constant that reached a colossal value of 2 × 104 at room temperature. With regard to the effect of the temperature on the dielectric properties of this material, the dielectric loss peak corresponding to the interfacial-charge polarization process shifted to higher frequencies with temperature by following a 3-dimentional (3D) hopping mechanism. The unique bi-phased amorphous structure of this material accounted for the observed results.
Original language | English |
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Pages (from-to) | 11623-11626 |
Number of pages | 4 |
Journal | Ceramics International |
Volume | 43 |
Issue number | 15 |
DOIs | |
Publication status | Published - 15 Oct 2017 |
Externally published | Yes |
Keywords
- 3-dimentional hopping mechanism
- Dielectric properties
- Interfacial charge polarization
- α-SiCN