Colossal dielectric constant and interfacial charge polarization in a polymer-derived amorphous silicon carbonitride

Xuqin Li, Feng Chen, Yiguang Wang*

*Corresponding author for this work

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Abstract

The dielectric properties of a polymer-derived amorphous silicon carbonitride were measured at different frequencies and temperatures. The results revealed that the material underwent an interfacial-charge polarization process. This process resulted in an S-shaped frequency dependence of the dielectric constant that reached a colossal value of 2 × 104 at room temperature. With regard to the effect of the temperature on the dielectric properties of this material, the dielectric loss peak corresponding to the interfacial-charge polarization process shifted to higher frequencies with temperature by following a 3-dimentional (3D) hopping mechanism. The unique bi-phased amorphous structure of this material accounted for the observed results.

Original languageEnglish
Pages (from-to)11623-11626
Number of pages4
JournalCeramics International
Volume43
Issue number15
DOIs
Publication statusPublished - 15 Oct 2017
Externally publishedYes

Keywords

  • 3-dimentional hopping mechanism
  • Dielectric properties
  • Interfacial charge polarization
  • α-SiCN

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Li, X., Chen, F., & Wang, Y. (2017). Colossal dielectric constant and interfacial charge polarization in a polymer-derived amorphous silicon carbonitride. Ceramics International, 43(15), 11623-11626. https://doi.org/10.1016/j.ceramint.2017.05.337