Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices

Liangmei Wu, Aiwei Wang, Jinan Shi, Jiahao Yan, Zhang Zhou, Ce Bian, Jiajun Ma, Ruisong Ma, Hongtao Liu, Jiancui Chen, Yuan Huang, Wu Zhou, Lihong Bao*, Min Ouyang*, Stephen J. Pennycook, Sokrates T. Pantelides, Hong Jun Gao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

131 Citations (Scopus)

Abstract

The development of high-performance memory devices has played a key role in the innovation of modern electronics. Non-volatile memory devices have manifested high capacity and mechanical reliability as a mainstream technology; however, their performance has been hampered by low extinction ratio and slow operational speed. Despite substantial efforts to improve these characteristics, typical write times of hundreds of micro- or milliseconds remain a few orders of magnitude longer than that of their volatile counterparts. Here we demonstrate non-volatile, floating-gate memory devices based on van der Waals heterostructures with atomically sharp interfaces between different functional elements, achieving ultrahigh-speed programming/erasing operations in the range of nanoseconds with extinction ratio up to 1010. This enhanced performance enables new device capabilities such as multi-bit storage, thus opening up applications in the realm of modern nanoelectronics and offering future fabrication guidelines for device scale up.

Original languageEnglish
Pages (from-to)882-887
Number of pages6
JournalNature Nanotechnology
Volume16
Issue number8
DOIs
Publication statusPublished - Aug 2021
Externally publishedYes

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