Zhu, J., Wang, Z., Yu, H., Li, N., Zhang, J., Meng, J., Liao, M., Zhao, J., Lu, X., Du, L., Yang, R., Shi, D., Jiang, Y., & Zhang, G. (2017). Argon Plasma Induced Phase Transition in Monolayer MoS2. Journal of the American Chemical Society, 139(30), 10216-10219. https://doi.org/10.1021/jacs.7b05765
Zhu, Jianqi ; Wang, Zhichang ; Yu, Hua et al. / Argon Plasma Induced Phase Transition in Monolayer MoS2. In: Journal of the American Chemical Society. 2017 ; Vol. 139, No. 30. pp. 10216-10219.
@article{35b094c808d54c5ea483f580443d360c,
title = "Argon Plasma Induced Phase Transition in Monolayer MoS2",
abstract = "In this work, we report a facile, clean, controllable and scalable phase engineering technique for monolayer MoS2. We found that weak Ar-plasma bombardment can locally induce 2H→1T phase transition in monolayer MoS2 to form mosaic structures. These 2H→1T phase transitions are stabilized by point defects (single S-vacancies) and the sizes of induced 1T domains are typically a few nanometers, as revealed by scanning tunneling microscopy measurements. On the basis of a selected-area phase patterning process, we fabricated MoS2 FETs inducing 1T phase transition within the metal contact areas, which exhibit substantially improved device performances. Our results open up a new route for phase engineering in monolayer MoS2 and other transition metal dichalcogenide (TMD) materials.",
author = "Jianqi Zhu and Zhichang Wang and Hua Yu and Na Li and Jing Zhang and Jianling Meng and Mengzhou Liao and Jing Zhao and Xiaobo Lu and Luojun Du and Rong Yang and Dongxia Shi and Ying Jiang and Guangyu Zhang",
note = "Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",
year = "2017",
month = aug,
day = "2",
doi = "10.1021/jacs.7b05765",
language = "English",
volume = "139",
pages = "10216--10219",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "30",
}
Zhu, J, Wang, Z, Yu, H, Li, N, Zhang, J, Meng, J, Liao, M, Zhao, J, Lu, X, Du, L, Yang, R, Shi, D, Jiang, Y & Zhang, G 2017, 'Argon Plasma Induced Phase Transition in Monolayer MoS2', Journal of the American Chemical Society, vol. 139, no. 30, pp. 10216-10219. https://doi.org/10.1021/jacs.7b05765
Argon Plasma Induced Phase Transition in Monolayer MoS2. / Zhu, Jianqi; Wang, Zhichang; Yu, Hua et al.
In:
Journal of the American Chemical Society, Vol. 139, No. 30, 02.08.2017, p. 10216-10219.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Argon Plasma Induced Phase Transition in Monolayer MoS2
AU - Zhu, Jianqi
AU - Wang, Zhichang
AU - Yu, Hua
AU - Li, Na
AU - Zhang, Jing
AU - Meng, Jianling
AU - Liao, Mengzhou
AU - Zhao, Jing
AU - Lu, Xiaobo
AU - Du, Luojun
AU - Yang, Rong
AU - Shi, Dongxia
AU - Jiang, Ying
AU - Zhang, Guangyu
N1 - Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/8/2
Y1 - 2017/8/2
N2 - In this work, we report a facile, clean, controllable and scalable phase engineering technique for monolayer MoS2. We found that weak Ar-plasma bombardment can locally induce 2H→1T phase transition in monolayer MoS2 to form mosaic structures. These 2H→1T phase transitions are stabilized by point defects (single S-vacancies) and the sizes of induced 1T domains are typically a few nanometers, as revealed by scanning tunneling microscopy measurements. On the basis of a selected-area phase patterning process, we fabricated MoS2 FETs inducing 1T phase transition within the metal contact areas, which exhibit substantially improved device performances. Our results open up a new route for phase engineering in monolayer MoS2 and other transition metal dichalcogenide (TMD) materials.
AB - In this work, we report a facile, clean, controllable and scalable phase engineering technique for monolayer MoS2. We found that weak Ar-plasma bombardment can locally induce 2H→1T phase transition in monolayer MoS2 to form mosaic structures. These 2H→1T phase transitions are stabilized by point defects (single S-vacancies) and the sizes of induced 1T domains are typically a few nanometers, as revealed by scanning tunneling microscopy measurements. On the basis of a selected-area phase patterning process, we fabricated MoS2 FETs inducing 1T phase transition within the metal contact areas, which exhibit substantially improved device performances. Our results open up a new route for phase engineering in monolayer MoS2 and other transition metal dichalcogenide (TMD) materials.
UR - http://www.scopus.com/inward/record.url?scp=85026809252&partnerID=8YFLogxK
U2 - 10.1021/jacs.7b05765
DO - 10.1021/jacs.7b05765
M3 - Article
C2 - 28731708
AN - SCOPUS:85026809252
SN - 0002-7863
VL - 139
SP - 10216
EP - 10219
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
IS - 30
ER -
Zhu J, Wang Z, Yu H, Li N, Zhang J, Meng J et al. Argon Plasma Induced Phase Transition in Monolayer MoS2. Journal of the American Chemical Society. 2017 Aug 2;139(30):10216-10219. doi: 10.1021/jacs.7b05765
