Abundant vacancies induced high polarization-attenuation effects in flower-like WS2 microwave absorbers

Jing Wang, Yuping Wang, Junye Cheng*, Yiru Fu, Yao Li, Wangli Nie, Jingwei Wang, Bin Liu, Deqing Zhang, Guangping Zheng, Maosheng Cao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Defect engineering could provide new ideas for the design of transition metal disulfide electromagnetic wave (EMW) absorbers with high performance. Since the effects of dipoles on impedance matching and EMW absorption are crucial for the development of novel absorbers, the polarization attenuation dependence on defect engineering should be understood at micro- and macro-scales. In this paper, it is found that the defect-rich WS2 nanoflowers synthesized by the cold plasma method possess excellent EMW absorption properties. Cold plasma treatment of materials is easy to perform and maintains the original shape of the material to a high degree. The formation of defects results in abundant electrochemically active sites, increased multiple reflection losses, improved dielectric properties and impedance matching in the materials. The RLmin of the defect-rich material with a thickness of 3.19 mm is as high as −54.36 dB at 8.16 GHz, and the effective absorption bandwidth is 4.72 GHz. The results reveal that the formation of defective vacancies enhances the effects of dipole polarization of the material on improving its EMW absorption properties. Thus, this work provides not only a facile preparation route for novel EMW-absorbing materials, but also a new strategy for tunning defects in transition metal disulfides.

Original languageEnglish
Pages (from-to)193-202
Number of pages10
JournalJournal of Materials Science and Technology
Volume194
DOIs
Publication statusPublished - 20 Sept 2024

Keywords

  • Cold plasma
  • Defect engineering
  • Electromagnetic wave absorption
  • Transition metal disulfides

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