Abstract
In this article, we report a wafer-level packaged Pirani vacuum gauge using the proprietary InvenSense CMOS MEMS technology. The micro Pirani vacuum gauge features three serpentine-shaped molybdenum thermistors on the suspended silicon-on-insulator (SOI) bridges, while the wiring gap of each serpentine-shaped silicon microbridge is 1.6 μm. For the vacuum range of 5× 10-4-760 Torr, the CMOS MEMS Pirani gauge configured with a constant temperature interface circuit achieves a sensitivity of 0.414 V/Torr in a very fine vacuum regime, while its heating power is less than 21.3 mW. Moreover, the measured output of the micro Pirani gauge shows good agreement with a semi-empirical model, while the model predicts that the proposed Pirani gauge can measure a vacuum pressure as low as 2.6× 10-4 Torr. The performance achieved by this Pirani vacuum gauge combined with its high level of integration makes it a promising Internet of Things (IoT) sensing node for vacuum monitoring in the industry.
Original language | English |
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Pages (from-to) | 5155-5161 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 68 |
Issue number | 10 |
DOIs | |
Publication status | Published - Oct 2021 |
Externally published | Yes |
Keywords
- CMOS MEMS
- Pirani
- thermistor
- vacuum gauge
- wafer-level packaged