A Wafer-Level Packaged CMOS MEMS Pirani Vacuum Gauge

Wei Xu, Xiaoyi Wang*, Xiaofang Pan, Amine Bermak, Yi Kuen Lee, Yatao Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

In this article, we report a wafer-level packaged Pirani vacuum gauge using the proprietary InvenSense CMOS MEMS technology. The micro Pirani vacuum gauge features three serpentine-shaped molybdenum thermistors on the suspended silicon-on-insulator (SOI) bridges, while the wiring gap of each serpentine-shaped silicon microbridge is 1.6 μm. For the vacuum range of 5× 10-4-760 Torr, the CMOS MEMS Pirani gauge configured with a constant temperature interface circuit achieves a sensitivity of 0.414 V/Torr in a very fine vacuum regime, while its heating power is less than 21.3 mW. Moreover, the measured output of the micro Pirani gauge shows good agreement with a semi-empirical model, while the model predicts that the proposed Pirani gauge can measure a vacuum pressure as low as 2.6× 10-4 Torr. The performance achieved by this Pirani vacuum gauge combined with its high level of integration makes it a promising Internet of Things (IoT) sensing node for vacuum monitoring in the industry.

Original languageEnglish
Pages (from-to)5155-5161
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume68
Issue number10
DOIs
Publication statusPublished - Oct 2021
Externally publishedYes

Keywords

  • CMOS MEMS
  • Pirani
  • thermistor
  • vacuum gauge
  • wafer-level packaged

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