A simulation about the influence of the gate-source-drain distance on the AlGaN/GaN HEMT performance at Ka-band

Dechun Guo; Kankan Qi; Junfeng Cui; Xiaobin Luo; Chao Yue

doi:10.1109/IMWS2.2012.6338225

A simulation about the influence of the gate-source-drain distance on the AlGaN/GaN HEMT performance at Ka-band

Dechun Guo^*, Kankan Qi, Junfeng Cui, Xiaobin Luo, Chao Yue

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Beijing Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Citations (Scopus)

Abstract

To improve the frequency and the output power, we present the results on the effect of distance between source-gate-drain in AlGaN/GaN high electron mobility transistors (HEMTs) by silvaco emulator. First, we adopt centrosymmetric gate structure, it means the L_gs(source-gate spacing) is equal to the L_gd(gate-drain spacing), and the L _sd(source-drain spacing)changes from 4μm to 2.4 um. It presents that the drain current, transconductance, the gain at 35GHz, f _T(current gain cutoff frequency)and f_max(maximum frequency of oscillation)get improved with the decrease of L_sd. However, when the distance comes to a certain extent, the fringe scatter from ohmic contact of source and drain would weaken electron mobility in channel layer, and it is hard to improve in technology fabrication. In addition, changing the L _sg and L_dg simultaneously demonstrates the influence of the different gate locations. Finally, we get the range of source-gate-drain distance for Ka-band AlGaN/GaN HEMT by the simulation results.

Original language	English
Title of host publication	IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding
Pages	117-120
Number of pages	4
DOIs	https://doi.org/10.1109/IMWS2.2012.6338225
Publication status	Published - 2012
Event	2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Nanjing, China Duration: 18 Sept 2012 → 20 Sept 2012

Publication series

Name	IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding

Conference

Conference	2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012
Country/Territory	China
City	Nanjing
Period	18/09/12 → 20/09/12

Keywords

GaN HEMT
Gate -Drain spacing
Ka-band
Source-Gate spacing

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10.1109/IMWS2.2012.6338225

Cite this

Guo, D., Qi, K., Cui, J., Luo, X., & Yue, C. (2012). A simulation about the influence of the gate-source-drain distance on the AlGaN/GaN HEMT performance at Ka-band. In IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding (pp. 117-120). Article 6338225 (IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding). https://doi.org/10.1109/IMWS2.2012.6338225

Guo, Dechun ; Qi, Kankan ; Cui, Junfeng et al. / A simulation about the influence of the gate-source-drain distance on the AlGaN/GaN HEMT performance at Ka-band. IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding. 2012. pp. 117-120 (IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding).

@inproceedings{2825b374cd1241f6892a8d3700e28510,

title = "A simulation about the influence of the gate-source-drain distance on the AlGaN/GaN HEMT performance at Ka-band",

abstract = "To improve the frequency and the output power, we present the results on the effect of distance between source-gate-drain in AlGaN/GaN high electron mobility transistors (HEMTs) by silvaco emulator. First, we adopt centrosymmetric gate structure, it means the Lgs(source-gate spacing) is equal to the Lgd(gate-drain spacing), and the L sd(source-drain spacing)changes from 4μm to 2.4 um. It presents that the drain current, transconductance, the gain at 35GHz, f T(current gain cutoff frequency)and fmax(maximum frequency of oscillation)get improved with the decrease of Lsd. However, when the distance comes to a certain extent, the fringe scatter from ohmic contact of source and drain would weaken electron mobility in channel layer, and it is hard to improve in technology fabrication. In addition, changing the L sg and Ldg simultaneously demonstrates the influence of the different gate locations. Finally, we get the range of source-gate-drain distance for Ka-band AlGaN/GaN HEMT by the simulation results.",

keywords = "GaN HEMT, Gate -Drain spacing, Ka-band, Source-Gate spacing",

author = "Dechun Guo and Kankan Qi and Junfeng Cui and Xiaobin Luo and Chao Yue",

year = "2012",

doi = "10.1109/IMWS2.2012.6338225",

language = "English",

isbn = "9781467309028",

series = "IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding",

pages = "117--120",

booktitle = "IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding",

note = "2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 ; Conference date: 18-09-2012 Through 20-09-2012",

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Guo, D, Qi, K, Cui, J, Luo, X & Yue, C 2012, A simulation about the influence of the gate-source-drain distance on the AlGaN/GaN HEMT performance at Ka-band. in IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding., 6338225, IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding, pp. 117-120, 2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012, Nanjing, China, 18/09/12. https://doi.org/10.1109/IMWS2.2012.6338225

A simulation about the influence of the gate-source-drain distance on the AlGaN/GaN HEMT performance at Ka-band. / Guo, Dechun; Qi, Kankan; Cui, Junfeng et al.
IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding. 2012. p. 117-120 6338225 (IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A simulation about the influence of the gate-source-drain distance on the AlGaN/GaN HEMT performance at Ka-band

AU - Guo, Dechun

AU - Qi, Kankan

AU - Cui, Junfeng

AU - Luo, Xiaobin

AU - Yue, Chao

PY - 2012

Y1 - 2012

N2 - To improve the frequency and the output power, we present the results on the effect of distance between source-gate-drain in AlGaN/GaN high electron mobility transistors (HEMTs) by silvaco emulator. First, we adopt centrosymmetric gate structure, it means the Lgs(source-gate spacing) is equal to the Lgd(gate-drain spacing), and the L sd(source-drain spacing)changes from 4μm to 2.4 um. It presents that the drain current, transconductance, the gain at 35GHz, f T(current gain cutoff frequency)and fmax(maximum frequency of oscillation)get improved with the decrease of Lsd. However, when the distance comes to a certain extent, the fringe scatter from ohmic contact of source and drain would weaken electron mobility in channel layer, and it is hard to improve in technology fabrication. In addition, changing the L sg and Ldg simultaneously demonstrates the influence of the different gate locations. Finally, we get the range of source-gate-drain distance for Ka-band AlGaN/GaN HEMT by the simulation results.

AB - To improve the frequency and the output power, we present the results on the effect of distance between source-gate-drain in AlGaN/GaN high electron mobility transistors (HEMTs) by silvaco emulator. First, we adopt centrosymmetric gate structure, it means the Lgs(source-gate spacing) is equal to the Lgd(gate-drain spacing), and the L sd(source-drain spacing)changes from 4μm to 2.4 um. It presents that the drain current, transconductance, the gain at 35GHz, f T(current gain cutoff frequency)and fmax(maximum frequency of oscillation)get improved with the decrease of Lsd. However, when the distance comes to a certain extent, the fringe scatter from ohmic contact of source and drain would weaken electron mobility in channel layer, and it is hard to improve in technology fabrication. In addition, changing the L sg and Ldg simultaneously demonstrates the influence of the different gate locations. Finally, we get the range of source-gate-drain distance for Ka-band AlGaN/GaN HEMT by the simulation results.

KW - GaN HEMT

KW - Gate -Drain spacing

KW - Ka-band

KW - Source-Gate spacing

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DO - 10.1109/IMWS2.2012.6338225

M3 - Conference contribution

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SN - 9781467309028

T3 - IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding

SP - 117

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BT - IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding

T2 - 2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012

Y2 - 18 September 2012 through 20 September 2012

ER -

Guo D, Qi K, Cui J, Luo X, Yue C. A simulation about the influence of the gate-source-drain distance on the AlGaN/GaN HEMT performance at Ka-band. In IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding. 2012. p. 117-120. 6338225. (IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding). doi: 10.1109/IMWS2.2012.6338225

A simulation about the influence of the gate-source-drain distance on the AlGaN/GaN HEMT performance at Ka-band

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