A simple bilayered magnetoelectric random access memory cell based on electric-field controllable domain structure

Jia Mian Hu*, Zheng Li, Jing Wang, Jing Ma, Y. H. Lin, C. W. Nan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

By considering the domain wall scattering in ferromagnetic striped-domain structure, we present a simple bilayered magnetoelectric random access memory cell with a ferromagnetic thin film grown on a ferroelectric layer. The calculations show that the striped-domain structure in the ferromagnetic film can change into a single-domain structure upon applying an electric field to the ferroelectric layer. As a result, the presence (absence) of the domain walls in response to the striped-domain (single-domain) state can cause an abrupt change in the film resistivity, which could be employed for memory applications accordingly.

Original languageEnglish
Article number043909
JournalJournal of Applied Physics
Volume108
Issue number4
DOIs
Publication statusPublished - 15 Aug 2010
Externally publishedYes

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