A magnetoelectric memory cell with coercivity state as writing data bit

Zheng Li; Jing Wang; Yuanhua Lin; C. W. Nan

doi:10.1063/1.3405722

A magnetoelectric memory cell with coercivity state as writing data bit

Zheng Li^*, Jing Wang, Yuanhua Lin, C. W. Nan

^*Corresponding author for this work

Tsinghua University

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

Commercial magnetic recording media employ magnetic-field-induced two different magnetization states ±M to write data. In this paper, we present a magnetic memory cell in which electric-field-induced two different coercive-field H_c states (i.e., low- H_c and high- H _c) rather than ±M are served as writing data bits. A multiferroic magnetoelectric bilayer with Fe0.93 Ge0.07 film grown on fully poled ferroelectric BiScO₃ -PbTiO₃ substrate, exhibiting a large electric-field modulation of H_c, is used for illustration of such a prototype electric-write/magnetic-read memory cell which is nonvolatile. The reading process of the different coercive-field H_c information written by electric fields is demonstrated by using magnetoresistance read head.

Original language	English
Article number	162505
Journal	Applied Physics Letters
Volume	96
Issue number	16
DOIs	https://doi.org/10.1063/1.3405722
Publication status	Published - 19 Apr 2010
Externally published	Yes

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abstract = "Commercial magnetic recording media employ magnetic-field-induced two different magnetization states ±M to write data. In this paper, we present a magnetic memory cell in which electric-field-induced two different coercive-field Hc states (i.e., low- Hc and high- H c) rather than ±M are served as writing data bits. A multiferroic magnetoelectric bilayer with Fe0.93 Ge0.07 film grown on fully poled ferroelectric BiScO3 -PbTiO3 substrate, exhibiting a large electric-field modulation of Hc, is used for illustration of such a prototype electric-write/magnetic-read memory cell which is nonvolatile. The reading process of the different coercive-field Hc information written by electric fields is demonstrated by using magnetoresistance read head.",

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N2 - Commercial magnetic recording media employ magnetic-field-induced two different magnetization states ±M to write data. In this paper, we present a magnetic memory cell in which electric-field-induced two different coercive-field Hc states (i.e., low- Hc and high- H c) rather than ±M are served as writing data bits. A multiferroic magnetoelectric bilayer with Fe0.93 Ge0.07 film grown on fully poled ferroelectric BiScO3 -PbTiO3 substrate, exhibiting a large electric-field modulation of Hc, is used for illustration of such a prototype electric-write/magnetic-read memory cell which is nonvolatile. The reading process of the different coercive-field Hc information written by electric fields is demonstrated by using magnetoresistance read head.

AB - Commercial magnetic recording media employ magnetic-field-induced two different magnetization states ±M to write data. In this paper, we present a magnetic memory cell in which electric-field-induced two different coercive-field Hc states (i.e., low- Hc and high- H c) rather than ±M are served as writing data bits. A multiferroic magnetoelectric bilayer with Fe0.93 Ge0.07 film grown on fully poled ferroelectric BiScO3 -PbTiO3 substrate, exhibiting a large electric-field modulation of Hc, is used for illustration of such a prototype electric-write/magnetic-read memory cell which is nonvolatile. The reading process of the different coercive-field Hc information written by electric fields is demonstrated by using magnetoresistance read head.

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A magnetoelectric memory cell with coercivity state as writing data bit

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