Abstract
The scattering characteristics of II-VI semiconductor materials filled in the waveguide with gaps were analyzed by using the 3-D edge-element method. Since the method starts from the variation of functional directly, it avoids the difficulties met in other methods in solving the eigenvalue and eigenfunction for very-thin lossy dielectric loaded waveguide. The comparisons between the calculated results and the experimental data confirm the effectiveness, reliability and accuracy of the method.
| Original language | English |
|---|---|
| Pages (from-to) | 401-406 |
| Number of pages | 6 |
| Journal | Kang T'ieh/Iron and Steel (Peking) |
| Volume | 31 |
| Issue number | 11 |
| Publication status | Published - Nov 1996 |
| Externally published | Yes |