Wen, Q., Qian, W., Nie, J., Cao, A., Ning, G., Wang, Y., Hu, L., Zhang, Q., Huang, J., & Wei, F. (2010). 100 mm long, semiconducting triple-walled carbon nanotubes. Advanced Materials, 22(16), 1867-1871. https://doi.org/10.1002/adma.200902746
Wen, Qian ; Qian, Weizhong ; Nie, Jingqi et al. / 100 mm long, semiconducting triple-walled carbon nanotubes. In: Advanced Materials. 2010 ; Vol. 22, No. 16. pp. 1867-1871.
@article{1a7032ace01340a78b42d5f9f47e062b,
title = "100 mm long, semiconducting triple-walled carbon nanotubes",
abstract = "Direct growth of 100 mm long, semiconducting triple-walled carbon nanotubes (TWNTs) on Si substrates by chemical vapor depoistion is reported. By tailoring the temperature for a certain gas flow rate, a yield of nearly 90% of centimeterlong TWNTs is obtained. The TWNTs show an unprecedented structural homogeneity, in which each shell maintains a constant chiral index extending over a very large distance (>60mm). The semiconducting TWNTs can be directly fabricated into field-effect transistors. (Figure Presented)",
author = "Qian Wen and Weizhong Qian and Jingqi Nie and Anyuan Cao and Guoqing Ning and Yao Wang and Ling Hu and Qiang Zhang and Jiaqi Huang and Fei Wei",
year = "2010",
month = apr,
day = "22",
doi = "10.1002/adma.200902746",
language = "English",
volume = "22",
pages = "1867--1871",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-Blackwell",
number = "16",
}
Wen, Q, Qian, W, Nie, J, Cao, A, Ning, G, Wang, Y, Hu, L, Zhang, Q, Huang, J & Wei, F 2010, '100 mm long, semiconducting triple-walled carbon nanotubes', Advanced Materials, vol. 22, no. 16, pp. 1867-1871. https://doi.org/10.1002/adma.200902746
100 mm long, semiconducting triple-walled carbon nanotubes. / Wen, Qian; Qian, Weizhong; Nie, Jingqi et al.
In:
Advanced Materials, Vol. 22, No. 16, 22.04.2010, p. 1867-1871.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - 100 mm long, semiconducting triple-walled carbon nanotubes
AU - Wen, Qian
AU - Qian, Weizhong
AU - Nie, Jingqi
AU - Cao, Anyuan
AU - Ning, Guoqing
AU - Wang, Yao
AU - Hu, Ling
AU - Zhang, Qiang
AU - Huang, Jiaqi
AU - Wei, Fei
PY - 2010/4/22
Y1 - 2010/4/22
N2 - Direct growth of 100 mm long, semiconducting triple-walled carbon nanotubes (TWNTs) on Si substrates by chemical vapor depoistion is reported. By tailoring the temperature for a certain gas flow rate, a yield of nearly 90% of centimeterlong TWNTs is obtained. The TWNTs show an unprecedented structural homogeneity, in which each shell maintains a constant chiral index extending over a very large distance (>60mm). The semiconducting TWNTs can be directly fabricated into field-effect transistors. (Figure Presented)
AB - Direct growth of 100 mm long, semiconducting triple-walled carbon nanotubes (TWNTs) on Si substrates by chemical vapor depoistion is reported. By tailoring the temperature for a certain gas flow rate, a yield of nearly 90% of centimeterlong TWNTs is obtained. The TWNTs show an unprecedented structural homogeneity, in which each shell maintains a constant chiral index extending over a very large distance (>60mm). The semiconducting TWNTs can be directly fabricated into field-effect transistors. (Figure Presented)
UR - http://www.scopus.com/inward/record.url?scp=77951596296&partnerID=8YFLogxK
U2 - 10.1002/adma.200902746
DO - 10.1002/adma.200902746
M3 - Article
C2 - 20512964
AN - SCOPUS:77951596296
SN - 0935-9648
VL - 22
SP - 1867
EP - 1871
JO - Advanced Materials
JF - Advanced Materials
IS - 16
ER -
Wen Q, Qian W, Nie J, Cao A, Ning G, Wang Y et al. 100 mm long, semiconducting triple-walled carbon nanotubes. Advanced Materials. 2010 Apr 22;22(16):1867-1871. doi: 10.1002/adma.200902746
