100 mm long, semiconducting triple-walled carbon nanotubes

Qian Wen*, Weizhong Qian, Jingqi Nie, Anyuan Cao, Guoqing Ning, Yao Wang, Ling Hu, Qiang Zhang, Jiaqi Huang, Fei Wei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

94 Citations (Scopus)

Abstract

Direct growth of 100 mm long, semiconducting triple-walled carbon nanotubes (TWNTs) on Si substrates by chemical vapor depoistion is reported. By tailoring the temperature for a certain gas flow rate, a yield of nearly 90% of centimeterlong TWNTs is obtained. The TWNTs show an unprecedented structural homogeneity, in which each shell maintains a constant chiral index extending over a very large distance (>60mm). The semiconducting TWNTs can be directly fabricated into field-effect transistors. (Figure Presented)

Original languageEnglish
Pages (from-to)1867-1871
Number of pages5
JournalAdvanced Materials
Volume22
Issue number16
DOIs
Publication statusPublished - 22 Apr 2010
Externally publishedYes

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