UV-Ozone Surface Modification to Suppress the Crosstalk in the Sb₂Se₃-Based Broadband Photodetector Array

As a promising material of photodetectors (PDs), antimony selenide (Sb₂Se₃) and its heterostructure own the advantages of low cost, high absorption coefficient, and excellent optoelectrical properties. However, the imaging application of the Sb₂Se₃-based PD array is blocked by the key barrier of crosstalk following the single-pixel device study. Here, the crosstalk in the Sb₂Se₃-based PD array is suppressed with a facile surface modification. Using the UV-ozone treatment, compatible with integrated circuit production, the ZnO/Sb₂Se₃/Sb₂O₃ heterostructure is fabricated via the oxidation of the Sb₂Se₃ surface, and owns enhanced detectivity of 3.63 × 10¹¹ Jones and broadband photodetection from UVto near-infrared region. Moreover, the electrical crosstalk between the pixels is suppressed from 91.06% to 5.37%, improving the imaging contrast. Despite the additional oxide layer, the response time remains at the nanosecond level of 298 and 287 ns, facilitating applications such as real-time imaging. This work provides an effective way with surface modification to suppress the crosstalk in the Sb₂Se₃-based PD array and breaks the key limit in its photoelectric imaging applications. It is also applicable to various materials, such as GeSe, Sb₂Te₃, and Bi₂Se₃, which will also open a new window for semiconductor industrialization.