Ultrathin Sn-doped Ga2O3 for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric

Zi Chun Liu; Jia Cheng Li; Hui Xia Yang; Han Yang; Yuan Huang; Yi Yun Zhang; Pui To Lai; Yuan Xiao Ma; Ye Liang Wang

doi:10.1016/j.scib.2024.04.059

Ultrathin Sn-doped Ga₂O₃ for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric

Zi Chun Liu
, Jia Cheng Li
, Hui Xia Yang
, Han Yang
, Yuan Huang
, Yi Yun Zhang
, Pui To Lai
, Yuan Xiao Ma^*
, Ye Liang Wang

^*此作品的通讯作者

Beijing Institute of Technology
CAS - Institute of Semiconductors
The University of Hong Kong

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

源语言	英语
页（从-至）	1848-1851
页数	4
期刊	Science Bulletin
卷	69
期	12
DOI	https://doi.org/10.1016/j.scib.2024.04.059
出版状态	已出版 - 30 6月 2024

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10.1016/j.scib.2024.04.059

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引用此

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title = "Ultrathin Sn-doped Ga2O3 for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric",

author = "Liu, \{Zi Chun\} and Li, \{Jia Cheng\} and Yang, \{Hui Xia\} and Han Yang and Yuan Huang and Zhang, \{Yi Yun\} and Lai, \{Pui To\} and Ma, \{Yuan Xiao\} and Wang, \{Ye Liang\}",

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AU - Yang, Han

AU - Huang, Yuan

AU - Zhang, Yi Yun

AU - Lai, Pui To

AU - Ma, Yuan Xiao

AU - Wang, Ye Liang

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