Ultrafast laser-induced decomposition for selective activation of GaAs

The manipulation of micro/nanostructures to customise their inherent material characteristics has garnered considerable attention. In this study, we present the selective activation of gallium arsenide (GaAs) via ultrafast laser-induced decomposition, which correlates with the emergence of ripples on the surface. This instigated a pronounced enrichment in the arsenic (As) concentration around the surface while inducing a depletion of gallium (Ga) at the structural depth. Theoretical simulations based on first principles exhibited a robust inclination towards the phase separation of GaAs, with the gasification of As–As pairs proving more facile than that of Ga–Ga pairs, particularly above the melting point of GaAs. As an illustrative application, a metal-semiconductor hybrid surface was confirmed, showing surface chemical bonding and surface-enhanced Raman scattering (SERS) through the reduction of silver ions on the laser-activated pattern. This laser-induced selective activation holds promise for broader applications, including the controlled growth of Pd and the development of Au/Ag alloy-based platforms, and thereby opens innovative avenues for advancements in semiconductors, solar cell technologies, precision sensing, and detection methodologies.