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Ultra-sensitive humidity sensors based on a MoS2/graphene Schottky diode

  • Hongliang Ma
  • , Qiang Gao
  • , Zhe Zhang
  • , Kaige Yang
  • , Jie Ding*
  • , Wendong Zhang*
  • , Xuge Fan*
  • *此作品的通讯作者
  • Beijing Institute of Technology
  • North University of China

科研成果: 期刊稿件文章同行评审

摘要

The exceptionally high specific surface area of two-dimensional (2D) materials has significantly promoted the development of 2D thin-film-based electronic devices for gas and humidity sensing. This work demonstrates an ultrasensitive electronic humidity sensor based on a monolayer MoS2/monolayer graphene Schottky diode. Within the relative humidity (RH) range of 15% to 55%, the MoS2/graphene Schottky diode based humidity sensor exhibited a remarkable responsivity (ΔR/R0) of approximately 1131.1%, which was three orders of magnitude higher than those of humidity sensors based on monolayer graphene (1.98%), graphene/MoS2 heterostructures (1.69%), and MoS2/graphene heterostructures (1.16%) and was over four times higher than that of monolayer MoS2 based sensors (271.1%). The ultra-sensitive humidity sensing mechanism was attributed to the modulation of the built-in electric field within the MoS2/graphene Schottky diode by adsorbed water molecules. These findings provide valuable insights for promoting the development of 2D material-based electronic devices in humidity sensing applications.

源语言英语
页(从-至)14258-14265
页数8
期刊Nanoscale
18
27
DOI
出版状态已出版 - 16 7月 2026

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