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Ultra-broadband common collector-cascode 4-cell distributed amplifier in 250nm InP HBT technology with over 200 GHz bandwidth

  • Stavros Giannakopoulos
  • , Klas Eriksson
  • , Izzat Darwazeh
  • , Zhongxia Simon He
  • , Herbert Zirath
  • Chalmers University of Technology
  • Ruag Space AB
  • University College London

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

An ultra broadband MMIC amplifier is designed using InP double-heterojunction bipolar transistors and its on-chip measurements are reported. The multi-cell distributed amplifier uses four gain cells where each consists of a common collector input stage followed by a cascode gain stage. The chip includes bias, decoupling and terminating circuits for the dc and RF interconnects; it measures 0.72 mm by 0.4 mm. It consumes 210 mW of power and can deliver up to 5.5 dBm of output power at 195 GHz. The amplifier achieves an average gain of 13.5 dB with an overall bandwidth over 200 GHz and a ± 2 dB gain ripple. The measurements indicate that this is the widest band dc-coupled amplifier reported to date and has the highest bandwidth reported among non-cascaded distributed amplifiers.

源语言英语
主期刊名2017 12th European Microwave Integrated Circuits Conference, EuMIC 2017
出版商Institute of Electrical and Electronics Engineers Inc.
页142-145
页数4
ISBN(电子版)9782874870484
DOI
出版状态已出版 - 19 12月 2017
已对外发布是
活动12th European Microwave Integrated Circuits Conference, EuMIC 2017 - Nuremburg, 德国
期限: 9 10月 2017 → 12 10月 2017

丛书

姓名2017 12th European Microwave Integrated Circuits Conference, EuMIC 2017
卷2017-January

会议

会议12th European Microwave Integrated Circuits Conference, EuMIC 2017
国家/地区德国
市Nuremburg
时期9/10/17 → 12/10/17

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