Tunable superconductive tunneling through diluted magnetic semiconductor heterostructures

Hak Chol Pak; Xiangdong Zhang

doi:10.1016/j.physleta.2005.06.101

Tunable superconductive tunneling through diluted magnetic semiconductor heterostructures

Hak Chol Pak
, Xiangdong Zhang^*

^*此作品的通讯作者

Beijing Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

We investigate the characteristic of Cooper pair tunneling through a system of two superconductors separated by a double-barrier diluted magnetic semiconductor quantum well. The zero-voltage critical supercurrent is calculated for a select rang of well width and magnetic field. The effect of oscillating resonant tunneling is found. It is interesting that such an effect can be tuned by the external magnetic field.

源语言	英语
页（从-至）	303-306
页数	4
期刊	Physics Letters, Section A: General, Atomic and Solid State Physics
卷	344
期	2-4
DOI	https://doi.org/10.1016/j.physleta.2005.06.101
出版状态	已出版 - 5 9月 2005
已对外发布	是

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abstract = "We investigate the characteristic of Cooper pair tunneling through a system of two superconductors separated by a double-barrier diluted magnetic semiconductor quantum well. The zero-voltage critical supercurrent is calculated for a select rang of well width and magnetic field. The effect of oscillating resonant tunneling is found. It is interesting that such an effect can be tuned by the external magnetic field.",

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AB - We investigate the characteristic of Cooper pair tunneling through a system of two superconductors separated by a double-barrier diluted magnetic semiconductor quantum well. The zero-voltage critical supercurrent is calculated for a select rang of well width and magnetic field. The effect of oscillating resonant tunneling is found. It is interesting that such an effect can be tuned by the external magnetic field.

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U2 - 10.1016/j.physleta.2005.06.101

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M3 - Article

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JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

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Tunable superconductive tunneling through diluted magnetic semiconductor heterostructures

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