Total-ionizing-dose effects on Al/SiO2 bimorph electrothermal microscanners

Wenjun Liao; En Xia Zhang; Michael L. Alles; Andrew L. Sternberg; Charles N. Arutt; Dingkang Wang; Simeng E. Zhao; Pan Wang; Michael W. McCurdy; Huikai Xie; Daniel M. Fleetwood; Robert A. Reed; Ronald D. Schrimpf

doi:10.1109/TNS.2018.2853139

Total-ionizing-dose effects on Al/SiO₂ bimorph electrothermal microscanners

Wenjun Liao
, En Xia Zhang
, Michael L. Alles
, Andrew L. Sternberg
, Charles N. Arutt
, Dingkang Wang
, Simeng E. Zhao
, Pan Wang
, Michael W. McCurdy
, Huikai Xie
, Daniel M. Fleetwood
, Robert A. Reed
, Ronald D. Schrimpf

Vanderbilt University
University of Florida

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

Total-ionizing-dose effects on electrothermal micro- scanners are investigated using 10-keV X-rays and 14.3-MeV oxygen ions. The corresponding changes in mechanical displacement are measured using an optical microscope. Applied dc voltage and/or radiation-induced charging lead to changes in the vertical position and resistance of the structures. Radiation-induced changes in the vertical position and resistance and postirradiation recovery or superrecovery of these quantities are sensitive to dc biases applied during and/or after irradiation. Simple electrostatic and computational models are qualitatively consistent with observed trends in device response.

源语言	英语
期刊论文编号	8404120
页（从-至）	2260-2267
页数	8
期刊	IEEE Transactions on Nuclear Science
卷	65
期	8
DOI	https://doi.org/10.1109/TNS.2018.2853139
出版状态	已出版 - 8月 2018
已对外发布	是

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10.1109/TNS.2018.2853139

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Liao, W., Zhang, E. X., Alles, M. L., Sternberg, A. L., Arutt, C. N., Wang, D., Zhao, S. E., Wang, P., McCurdy, M. W., Xie, H., Fleetwood, D. M., Reed, R. A., & Schrimpf, R. D. (2018). Total-ionizing-dose effects on Al/SiO₂ bimorph electrothermal microscanners. IEEE Transactions on Nuclear Science, 65(8), 2260-2267. 期刊论文 8404120. https://doi.org/10.1109/TNS.2018.2853139

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title = "Total-ionizing-dose effects on Al/SiO2 bimorph electrothermal microscanners",

abstract = "Total-ionizing-dose effects on electrothermal micro- scanners are investigated using 10-keV X-rays and 14.3-MeV oxygen ions. The corresponding changes in mechanical displacement are measured using an optical microscope. Applied dc voltage and/or radiation-induced charging lead to changes in the vertical position and resistance of the structures. Radiation-induced changes in the vertical position and resistance and postirradiation recovery or superrecovery of these quantities are sensitive to dc biases applied during and/or after irradiation. Simple electrostatic and computational models are qualitatively consistent with observed trends in device response.",

keywords = "Displacement, electrothermal microscanner, thermal resistance, total ionization dose",

author = "Wenjun Liao and Zhang, \{En Xia\} and Alles, \{Michael L.\} and Sternberg, \{Andrew L.\} and Arutt, \{Charles N.\} and Dingkang Wang and Zhao, \{Simeng E.\} and Pan Wang and McCurdy, \{Michael W.\} and Huikai Xie and Fleetwood, \{Daniel M.\} and Reed, \{Robert A.\} and Schrimpf, \{Ronald D.\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2018",

month = aug,

doi = "10.1109/TNS.2018.2853139",

language = "English",

volume = "65",

pages = "2260--2267",

journal = "IEEE Transactions on Nuclear Science",

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T1 - Total-ionizing-dose effects on Al/SiO2 bimorph electrothermal microscanners

AU - Liao, Wenjun

AU - Zhang, En Xia

AU - Alles, Michael L.

AU - Sternberg, Andrew L.

AU - Arutt, Charles N.

AU - Wang, Dingkang

AU - Zhao, Simeng E.

AU - Wang, Pan

AU - McCurdy, Michael W.

AU - Xie, Huikai

AU - Fleetwood, Daniel M.

AU - Reed, Robert A.

AU - Schrimpf, Ronald D.

PY - 2018/8

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N2 - Total-ionizing-dose effects on electrothermal micro- scanners are investigated using 10-keV X-rays and 14.3-MeV oxygen ions. The corresponding changes in mechanical displacement are measured using an optical microscope. Applied dc voltage and/or radiation-induced charging lead to changes in the vertical position and resistance of the structures. Radiation-induced changes in the vertical position and resistance and postirradiation recovery or superrecovery of these quantities are sensitive to dc biases applied during and/or after irradiation. Simple electrostatic and computational models are qualitatively consistent with observed trends in device response.

AB - Total-ionizing-dose effects on electrothermal micro- scanners are investigated using 10-keV X-rays and 14.3-MeV oxygen ions. The corresponding changes in mechanical displacement are measured using an optical microscope. Applied dc voltage and/or radiation-induced charging lead to changes in the vertical position and resistance of the structures. Radiation-induced changes in the vertical position and resistance and postirradiation recovery or superrecovery of these quantities are sensitive to dc biases applied during and/or after irradiation. Simple electrostatic and computational models are qualitatively consistent with observed trends in device response.

KW - Displacement

KW - electrothermal microscanner

KW - thermal resistance

KW - total ionization dose

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Total-ionizing-dose effects on Al/SiO2 bimorph electrothermal microscanners

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Total-ionizing-dose effects on Al/SiO₂ bimorph electrothermal microscanners