TY - JOUR
T1 - Topographical investigation of rhenium oxide thin films grown via direct chemical vapor deposition
AU - Wazir, Nasrullah
AU - Hussain, Saddam
AU - Ullah, Inayat
AU - Arif, Muhammad
AU - Ullah, Roh
AU - Liu, Ruibin
AU - Hao, Yufeng
N1 - Publisher Copyright:
© 2026 Elsevier B.V.
PY - 2026/12/15
Y1 - 2026/12/15
N2 - Nanostructured transition metal oxides (TMOs) are important materials, but they are often challenging to grow directly on substrates. In this work, large-area, continuous ReO3 thin films were successfully synthesized via direct CVD on non-catalytic substrates using NH4ReO4 powder as the precursors. The films were characterized by Raman spectroscopy, SEM, EDS, AFM, and XPS. Raman spectroscopy revealed characteristic ReO3 peaks at 332.52, 886.93, and 956.72 cm−1. EDS confirmed a Re:O atomic ratio of approximately 1:3, while AFM revealed an average film thickness of ∼20 nm. High-resolution XPS demonstrated a predominant Re6+ oxidation state consistent with ReO3, although the presence of additional minor ReOx species cannot be excluded. This direct CVD approach offers a scalable route for the growth of ReO3 thin-film on various substrates for device integration.
AB - Nanostructured transition metal oxides (TMOs) are important materials, but they are often challenging to grow directly on substrates. In this work, large-area, continuous ReO3 thin films were successfully synthesized via direct CVD on non-catalytic substrates using NH4ReO4 powder as the precursors. The films were characterized by Raman spectroscopy, SEM, EDS, AFM, and XPS. Raman spectroscopy revealed characteristic ReO3 peaks at 332.52, 886.93, and 956.72 cm−1. EDS confirmed a Re:O atomic ratio of approximately 1:3, while AFM revealed an average film thickness of ∼20 nm. High-resolution XPS demonstrated a predominant Re6+ oxidation state consistent with ReO3, although the presence of additional minor ReOx species cannot be excluded. This direct CVD approach offers a scalable route for the growth of ReO3 thin-film on various substrates for device integration.
KW - Chemical vapor deposition
KW - Rhenium oxide
KW - Thin films
KW - Transition metal oxides
UR - https://www.scopus.com/pages/publications/105051232515
U2 - 10.1016/j.matlet.2026.141678
DO - 10.1016/j.matlet.2026.141678
M3 - Article
AN - SCOPUS:105051232515
SN - 0167-577X
VL - 425
JO - Materials Letters
JF - Materials Letters
M1 - 141678
ER -