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Topographical investigation of rhenium oxide thin films grown via direct chemical vapor deposition

  • Nasrullah Wazir*
  • , Saddam Hussain
  • , Inayat Ullah
  • , Muhammad Arif
  • , Roh Ullah
  • , Ruibin Liu
  • , Yufeng Hao
  • *此作品的通讯作者
  • School of Electronics and Communication Engineering
  • Quanzhou University of Information Engineering
  • Centre for Quantum Physics
  • Beijing Institute of Technology
  • Department of Medical Lab Technology
  • Abbottabad University of Science and Technology
  • School of Physics and Electronic Information
  • Yunnan Normal University
  • Department of Chemical and Materials Engineering
  • Concordia University
  • Nanjing University

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Nanostructured transition metal oxides (TMOs) are important materials, but they are often challenging to grow directly on substrates. In this work, large-area, continuous ReO3 thin films were successfully synthesized via direct CVD on non-catalytic substrates using NH4ReO4 powder as the precursors. The films were characterized by Raman spectroscopy, SEM, EDS, AFM, and XPS. Raman spectroscopy revealed characteristic ReO3 peaks at 332.52, 886.93, and 956.72 cm−1. EDS confirmed a Re:O atomic ratio of approximately 1:3, while AFM revealed an average film thickness of ∼20 nm. High-resolution XPS demonstrated a predominant Re6+ oxidation state consistent with ReO3, although the presence of additional minor ReOx species cannot be excluded. This direct CVD approach offers a scalable route for the growth of ReO3 thin-film on various substrates for device integration.

源语言英语
期刊论文编号141678
期刊Materials Letters
卷425
DOI
出版状态已出版 - 15 12月 2026
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