Thickness dependent valence fluctuation of CeN film

Wende Xiao; Qinlin Guo; E. G. Wang

doi:10.1016/j.susc.2004.09.004

Thickness dependent valence fluctuation of CeN film

Wende Xiao
, Qinlin Guo^*
, E. G. Wang

^*此作品的通讯作者

CAS - Institute of Physics
National University of Singapore

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

CeN films with different thickness are synthesized on a Re(0001) substrate and studied by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy. A thickness dependent valence fluctuation is observed by XPS. Valence fluctuation only occurs with film thickness larger than a critical value of about 15nm. This interesting phenomenon is mainly attributed to the stress in CeN films due to the large lattice mismatch between the CeN film and the substrate, and a possible composition deviation at the interface.

源语言	英语
页（从-至）	296-300
页数	5
期刊	Surface Science
卷	572
期	2-3
DOI	https://doi.org/10.1016/j.susc.2004.09.004
出版状态	已出版 - 20 11月 2004
已对外发布	是

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@article{5ec22280c1df4ae4a6f99efe30af2136,

title = "Thickness dependent valence fluctuation of CeN film",

abstract = "CeN films with different thickness are synthesized on a Re(0001) substrate and studied by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy. A thickness dependent valence fluctuation is observed by XPS. Valence fluctuation only occurs with film thickness larger than a critical value of about 15nm. This interesting phenomenon is mainly attributed to the stress in CeN films due to the large lattice mismatch between the CeN film and the substrate, and a possible composition deviation at the interface.",

keywords = "Auger electron spectroscopy, Cerium, Nitrides, X-ray photoelectron spectroscopy",

author = "Wende Xiao and Qinlin Guo and Wang, \{E. G.\}",

year = "2004",

month = nov,

day = "20",

doi = "10.1016/j.susc.2004.09.004",

language = "English",

volume = "572",

pages = "296--300",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "2-3",

}

TY - JOUR

T1 - Thickness dependent valence fluctuation of CeN film

AU - Xiao, Wende

AU - Guo, Qinlin

AU - Wang, E. G.

PY - 2004/11/20

Y1 - 2004/11/20

N2 - CeN films with different thickness are synthesized on a Re(0001) substrate and studied by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy. A thickness dependent valence fluctuation is observed by XPS. Valence fluctuation only occurs with film thickness larger than a critical value of about 15nm. This interesting phenomenon is mainly attributed to the stress in CeN films due to the large lattice mismatch between the CeN film and the substrate, and a possible composition deviation at the interface.

AB - CeN films with different thickness are synthesized on a Re(0001) substrate and studied by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy. A thickness dependent valence fluctuation is observed by XPS. Valence fluctuation only occurs with film thickness larger than a critical value of about 15nm. This interesting phenomenon is mainly attributed to the stress in CeN films due to the large lattice mismatch between the CeN film and the substrate, and a possible composition deviation at the interface.

KW - Auger electron spectroscopy

KW - Cerium

KW - Nitrides

KW - X-ray photoelectron spectroscopy

UR - https://www.scopus.com/pages/publications/9644283206

U2 - 10.1016/j.susc.2004.09.004

DO - 10.1016/j.susc.2004.09.004

M3 - Article

AN - SCOPUS:9644283206

SN - 0039-6028

VL - 572

SP - 296

EP - 300

JO - Surface Science

JF - Surface Science

IS - 2-3

ER -

Thickness dependent valence fluctuation of CeN film

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