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Thermoelectric properties of two-dimensional topological insulators TlBi and TlSb

  • L. J. Gong
  • , R. S. Cheng
  • , Q. Z. Han*
  • , J. Yang*
  • , H. L. Shi
  • , Y. H. Zhao
  • , L. J. Shi
  • , Z. T. Jiang*
  • *此作品的通讯作者
  • Beijing Institute of Technology
  • Beijing Academy of Quantum Information Sciences
  • Shandong Graphenjoy Advanced Material CO. LTD
  • Shanxi Datong University
  • University of Chinese Academy of Sciences
  • National Basic Science Data Center

科研成果: 期刊稿件文章同行评审

摘要

A comprehensive investigation into the thermoelectric (TE) properties of the two-dimensional TlBi and TlSb topological insulators has been conducted by means of first-principles calculations and nonequilibrium Green’s function methods. The TlBi (TlSb) monolayers of bandgap 0.413 eV (0.127 eV) show the high (moderate) TE figure of merit Z T ≈ 2.6 (0.6) along the armchair and zigzag directions. In addition, the two Z T peaks along the two directions of the TlSb are almost identical, which are different from the case of the TlBi with the right Z T peak appearing at different chemical potentials. In the TlBi (TlSb) nanoribbons, the influences of the edge states and the bulk states on the TE properties have been fully revealed. The appearance of the edge states in the bulk bandgap enables the nanoribbons to behave as metals, which seriously suppresses the Seebeck coefficients and then the Z Ts. As a consequence, the total Z Ts become much smaller than the separate Z Ts contributed by the edge and bulk states and smaller than the Z Ts of the corresponding monolayers. The mechanism by which edge states influence TE properties provides a helpful reference for understanding the TE properties of analogous two-dimensional topological insulators.

源语言英语
文章编号094302
期刊Journal of Applied Physics
139
9
DOI
出版状态已出版 - 7 3月 2026
已对外发布

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