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The warming-up effects of quantum-dot light emitting diodes: A reversible stability issue related to shell traps

  • Menglin Li
  • , Xin Zhang
  • , Hui Bao
  • , Yiran Yan
  • , Xian Gang Wu
  • , Cheng Wang
  • , Yongqi Cao
  • , Min Yang
  • , Cuili Chen
  • , Xiangmin Hu
  • , Wenjun Hou
  • , Weiran Cao
  • , Haizheng Zhong*
  • *此作品的通讯作者
  • Beijing Institute of Technology
  • TCL Technology Group Corporation

科研成果: 期刊稿件文章同行评审

摘要

The aging phenomenon is commonly observed in quantum-dot light emitting diodes (QLEDs), involving complex chemical or physical processes. Resolving the underlying mechanism of these aging issues is crucial to deliver reliable electroluminescent devices in future display applications. Here, we report a reversible positive aging phenomenon that the device brightness and efficiency significantly improve after device operation, but recover to initial states after long-time storage or mild heat treatment, which can be termed as warming-up effects. Steady and transient equivalent circuit analysis suggest that the radiative recombination current dramatically increases but electron leakage from the quantum dots (QDs) to hole transport layer becomes more accessible during the warming-up process. Further analysis discloses that the notable enhancement of device efficiency can be ascribed to the filling of shell traps in gradient alloyed QDs. This work reveals a distinct positive aging phenomenon featured with reversibility, and further guidelines would be provided to achieve stable QLED devices in real display applications.

源语言英语
期刊论文编号044704
期刊Journal of Chemical Physics
160
4
DOI
出版状态已出版 - 28 1月 2024

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