TY - JOUR
T1 - The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs
AU - Zhang, Guangchen
AU - Yu, Zhinong
AU - Dong, Junchen
AU - Li, Qi
AU - Wang, Yi
AU - Han, Dedong
N1 - Publisher Copyright:
© 2022, John Wiley and Sons Inc. All rights reserved.
PY - 2022
Y1 - 2022
N2 - The effects of annealing atmosphere (Vacuum, Air, N2, and O2) on performance of dual high-k gate dielectrics ITO TFTs are studied. The ITO TFTs annealed in N2 show excellent electrical properties, including a saturation mobility of 18.0 cm2V-1s-1, a subthreshold swing of 215.4 mV/decade, and an on-to-off state current ratio of 1.79 × 109. This work drives the application of ITO TFTs in the field of electronics devices.
AB - The effects of annealing atmosphere (Vacuum, Air, N2, and O2) on performance of dual high-k gate dielectrics ITO TFTs are studied. The ITO TFTs annealed in N2 show excellent electrical properties, including a saturation mobility of 18.0 cm2V-1s-1, a subthreshold swing of 215.4 mV/decade, and an on-to-off state current ratio of 1.79 × 109. This work drives the application of ITO TFTs in the field of electronics devices.
KW - Indium-Tin-Oxide
KW - annealing atmosphere
KW - electrical properties
KW - thin-film transistors
UR - https://www.scopus.com/pages/publications/85141897292
U2 - 10.1002/sdtp.16036
DO - 10.1002/sdtp.16036
M3 - Conference article
AN - SCOPUS:85141897292
SN - 0097-966X
VL - 53
SP - 600
EP - 602
JO - Digest of Technical Papers - SID International Symposium
JF - Digest of Technical Papers - SID International Symposium
IS - S1
T2 - International Conference on Display Technology, ICDT 2022
Y2 - 9 July 2022 through 12 July 2022
ER -