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The distribution measurement of the photo-induced plasma in semiconductor by near-field scanning microwave microscopy

  • Liao Ma
  • , Ning Leng
  • , Xiu Zhu Ye
  • , Ming Jin
  • , Ming Bai

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

The photo-induced plasma in semiconductor is the fundamental property of the photoelectric phenomenon. The optical illumination of an intrinsic silicon wafer creates inhomogeneous electron-hole plasma in the illuminated area. In this work, an imaging method is proposed to measure the distribution of photo-induced plasma in silicon by a near-field scanning microwave microscopy. The method is implemented by imaging the distributions of photo-induced plasma on high resistance silicon wafer under laser illumination. It is therefore demonstrated to be an effective optoelectronic characteristic method for semiconductor at microwave frequency.

源语言英语
主期刊名2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings
出版商Institute of Electrical and Electronics Engineers Inc.
169-172
页数4
ISBN(电子版)9781728153049
DOI
出版状态已出版 - 12月 2019
活动2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Xiamen, 中国
期限: 17 12月 201920 12月 2019

出版系列

姓名2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings

会议

会议2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019
国家/地区中国
Xiamen
时期17/12/1920/12/19

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