TY - GEN
T1 - The annealing process of R.F. magnetron sputtered ZnO:Al films
AU - Yu, Zhinong
AU - Xu, Jin
AU - Xue, Wei
AU - Li, Jinwei
PY - 2007
Y1 - 2007
N2 - The ZnO:Al films were annealed at different atmosphere. The films annealed in vacuum showed perfect properties, compared with in air and Ar atmosphere, and the low resistivity of the order of 10-3 Ω·cm was obtained in the condition of vacuum annealing at 220 °C.
AB - The ZnO:Al films were annealed at different atmosphere. The films annealed in vacuum showed perfect properties, compared with in air and Ar atmosphere, and the low resistivity of the order of 10-3 Ω·cm was obtained in the condition of vacuum annealing at 220 °C.
UR - https://www.scopus.com/pages/publications/50049111279
U2 - 10.1109/AOE.2007.4410872
DO - 10.1109/AOE.2007.4410872
M3 - Conference contribution
AN - SCOPUS:50049111279
SN - 0978921739
SN - 9780978921736
T3 - 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE
SP - 552
EP - 554
BT - 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE
T2 - 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE
Y2 - 17 October 2007 through 19 October 2007
ER -