摘要
Aligned InN nanowires were synthesized by a template-assisted two-step method. The as-synthesized aligned InN nanowires were of single crystal structure and exhibited good electrical properties with a carrier mobility of 93.8 cm2 V-1 s-1 and a strong photoluminescence emission peak at 740 nm at room-temperature. The alignment characteristic makes it more convenient to integrate the nanowires into nanodevices. The two-step method provides an effective and low-cost road for ordered nitride nanowires in a controllable way.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 6806-6809 |
| 页数 | 4 |
| 期刊 | RSC Advances |
| 卷 | 2 |
| 期 | 17 |
| DOI | |
| 出版状态 | 已出版 - 2012 |
学术指纹
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