Temperature-frequency dependence and mechanism of dielectric properties for γ-Y₂Si₂O₇

This paper reports that single-phase γ-Y₂Si ₂O₇ is prepared via a sufficient blending and cold-pressed sintering technique from Y₂O₃ powder and SiO₂ nanopowder. It studies the dielectric properties of γ-Y₂Si ₂O₇ as a function of the temperature and frequency. The γ-Y₂Si₂O₇ exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400 °C in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y₂Si₂O₇ differing from that of SiO ₂ is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.