Studies of BiCuSeO thin films for potential infrared detector application

Longfei Li; Yunong Liu; Zhitao Yang; Yuan He; Pei Yang; Dongyun Chen; Yongkai Li; Senyun Ye; Yanbo Yang; Qingfan Shi; Ming Zhao; Qinsheng Wang; Wende Xiao; Junfeng Han

doi:10.1016/j.matlet.2018.08.145

Studies of BiCuSeO thin films for potential infrared detector application

Longfei Li, Yunong Liu, Zhitao Yang, Yuan He, Pei Yang, Dongyun Chen, Yongkai Li, Senyun Ye, Yanbo Yang, Qingfan Shi, Ming Zhao, Qinsheng Wang, Wende Xiao, Junfeng Han^*

^*此作品的通讯作者

物理学院

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

In this work, we prepared BiCuSeO polycrystalline films by evaporating precursors following with selenization treatment. Their optical and photoelectrical properties were investigated from visible to infrared light. Optical absorption spectrum indicated that the absorption coefficient was 10⁴–10⁵ cm⁻¹ from 0.4 μm to 2 μm. Photo induced voltages were clearly detected when the film surfaces were irradiated by the lasers with various wavelengths and powers. The voltage had a linear dependence with the laser illumination intensity, which indicated the main response mechanism of photo-thermal electric effect in the films. All the results suggested that the BiCuSeO film was a potential material for near infrared detector application.

源语言	英语
页（从-至）	86-89
页数	4
期刊	Materials Letters
卷	233
DOI	https://doi.org/10.1016/j.matlet.2018.08.145
出版状态	已出版 - 15 12月 2018

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title = "Studies of BiCuSeO thin films for potential infrared detector application",

abstract = "In this work, we prepared BiCuSeO polycrystalline films by evaporating precursors following with selenization treatment. Their optical and photoelectrical properties were investigated from visible to infrared light. Optical absorption spectrum indicated that the absorption coefficient was 104–105 cm−1 from 0.4 μm to 2 μm. Photo induced voltages were clearly detected when the film surfaces were irradiated by the lasers with various wavelengths and powers. The voltage had a linear dependence with the laser illumination intensity, which indicated the main response mechanism of photo-thermal electric effect in the films. All the results suggested that the BiCuSeO film was a potential material for near infrared detector application.",

keywords = "Deposition, Semiconductors, Sensors, Thin films",

author = "Longfei Li and Yunong Liu and Zhitao Yang and Yuan He and Pei Yang and Dongyun Chen and Yongkai Li and Senyun Ye and Yanbo Yang and Qingfan Shi and Ming Zhao and Qinsheng Wang and Wende Xiao and Junfeng Han",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = dec,

day = "15",

doi = "10.1016/j.matlet.2018.08.145",

language = "English",

volume = "233",

pages = "86--89",

journal = "Materials Letters",

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TY - JOUR

T1 - Studies of BiCuSeO thin films for potential infrared detector application

AU - Li, Longfei

AU - Liu, Yunong

AU - Yang, Zhitao

AU - He, Yuan

AU - Yang, Pei

AU - Chen, Dongyun

AU - Li, Yongkai

AU - Ye, Senyun

AU - Yang, Yanbo

AU - Shi, Qingfan

AU - Zhao, Ming

AU - Wang, Qinsheng

AU - Xiao, Wende

AU - Han, Junfeng

PY - 2018/12/15

Y1 - 2018/12/15

N2 - In this work, we prepared BiCuSeO polycrystalline films by evaporating precursors following with selenization treatment. Their optical and photoelectrical properties were investigated from visible to infrared light. Optical absorption spectrum indicated that the absorption coefficient was 104–105 cm−1 from 0.4 μm to 2 μm. Photo induced voltages were clearly detected when the film surfaces were irradiated by the lasers with various wavelengths and powers. The voltage had a linear dependence with the laser illumination intensity, which indicated the main response mechanism of photo-thermal electric effect in the films. All the results suggested that the BiCuSeO film was a potential material for near infrared detector application.

AB - In this work, we prepared BiCuSeO polycrystalline films by evaporating precursors following with selenization treatment. Their optical and photoelectrical properties were investigated from visible to infrared light. Optical absorption spectrum indicated that the absorption coefficient was 104–105 cm−1 from 0.4 μm to 2 μm. Photo induced voltages were clearly detected when the film surfaces were irradiated by the lasers with various wavelengths and powers. The voltage had a linear dependence with the laser illumination intensity, which indicated the main response mechanism of photo-thermal electric effect in the films. All the results suggested that the BiCuSeO film was a potential material for near infrared detector application.

KW - Deposition

KW - Semiconductors

KW - Sensors

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=85052431468&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2018.08.145

DO - 10.1016/j.matlet.2018.08.145

M3 - Article

AN - SCOPUS:85052431468

SN - 0167-577X

VL - 233

SP - 86

EP - 89

JO - Materials Letters

JF - Materials Letters

ER -

Studies of BiCuSeO thin films for potential infrared detector application

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