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Strain-modulation of electronic and optical properties of two-dimensional GeTe/SnSe van der Waals heterostructure

  • Weilin Zhao
  • , Jingxue Du
  • , Lijie Shi*
  • *此作品的通讯作者
  • Beijing Institute of Technology

科研成果: 期刊稿件文章同行评审

摘要

By first-principles method, the electronic and optical properties of stable GeTe/SnSe van der Waals heterostructure under strain have been investigated. By applying uniaxial and biaxial strain, the bandgap and band alignment of this heterostructure can be controlled, and semiconductor-metal phase transition is observed. By applying biaxial strain, the optical absorption of the heterostructure can be improved, and the power conversion efficiency can be improved from 13% to 19%. The easily controlled electronic properties and good optical properties make GeTe/SnSe van der Waals heterostructure to be a promising material in optoelectronic and solar energy conversion devices.

源语言英语
期刊论文编号130046
期刊Physics Letters, Section A: General, Atomic and Solid State Physics
528
DOI
出版状态已出版 - 28 12月 2024
已对外发布

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